Synchronous Pulsed Plasma for Silicon Etch Applications

Darnon, Maxime; Petit-Etienne, C.; Pargon, E.; Cunge, G.; Vallier, L.; Bodart, P.; Haas, M.; Banna, S.; Lill, Thorsten; Joubert, O.

doi:10.1149/1.3360700

Cited by 17 publications

(4 citation statements)

References 15 publications

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“…A lower duty cycle of pulsed plasmas reduces the physical damage that the plasma can bring to the sample. Normally, a lower duty cycle is favorable only when the etching of a material is desired [30,31,32].…”

Section: Resultsmentioning

confidence: 99%

Cupric Oxide Nanostructures from Plasma Surface Modification of Copper

et al. 2019

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Taking inspiration from the hydrophilic and superhydrophilic properties observed from the nanostructures present on the leaves of plants such as Alocasia odora, Calathea zebrina, and Ruelia devosiana, we were able to synthesize cupric oxide (CuO) nanostructures from the plasma surface modification of copper (Cu) that exhibits hydrophilic and superhydrophilic properties. The Cu sheets were exposed to oxygen plasma produced from the P300 plasma device (Alliance Concept, Cran-Gevrier, France) at varying power, irradiation times, gas flow rates, and pulsing duty cycles. The untreated and plasma-treated Cu sheets were characterized by contact angle measurements, scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) to determine the changes in the surface of Cu before and after plasma treatment. Results showed that plasma-treated Cu sheets exhibited enhanced wetting properties compared to untreated Cu. We attributed the decrease in the measured water contact angles after plasma treatment to increased surface roughness, formation of CuO nanostructures, and transformation of Cu to either CuO2 or Cu2O3. The presence of the CuO nanostructures on the surface of Cu is very useful in terms of its possible applications, such as: (1) in antimicrobial and anti-fouling tubing; (2) in the improvement of heat dissipation devices, such as microfluidic cooling systems and heat pipes; and (3) as an additional protection to Cu from further corrosion. This study also shows the possible mechanisms on how CuO, CuO2, and Cu2O3 were formed from Cu based on the varying the plasma parameters.

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Section: Resultsmentioning

confidence: 99%

Cupric Oxide Nanostructures from Plasma Surface Modification of Copper

et al. 2019

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“…The basic phenomena taking place during the two RF power phases can be explained as follows. During the ON phase, the plasma ignites and the electron (and ion) density rises to form H 2 O + , O 2 + , HBr + , Br 2 + reactive species. , The ions are accelerated to high energy (about 250 eV) by the self-bias voltage that develops rapidly on the electrostatic chuck during this ON phase. Such a high energy allows the ions to reach the bottom of the trenches and assist in the etching process.…”

Section: Dry Etching Process Of the Dsa-bcp/soc/si Stackmentioning

confidence: 99%

Pulsed Transfer Etching of PS–PDMS Block Copolymers Self-Assembled in 193 nm Lithography Stacks

Girardot

Böhme

Archambault

et al. 2014

ACS Appl. Mater. Interfaces

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This work presents the graphoepitaxy of high-χ block copolymers (BCP) in standard industry-like lithography stacks and their transfer into the silicon substrate The process includes conventional 193 nm photolithography, directed self-assembly of polystyrene-block-polydimethylsiloxane (PS-b-PDMS) and pulsed plasma etching to transfer the obtained features into the substrate. PS-b-PDMS has a high Flory-Huggins interaction parameter (high-χ) and is capable of achieving sub-10 nm feature sizes. The photolithography stack is fabricated on 300 mm diameter silicon wafers and is composed of three layers: spin-on-carbon (SoC), silicon-containing anti-reflective coating (SiARC) and 193 nm photolithography resist. Sixty-nanometer-deep trenches are first patterned by plasma etching in the SiARC/SoC stack using the resist mask. The PS-b-PDMS is then spread on the substrate surface. Directed self-assembly (DSA) of the BCP is induced by a solvent vapor annealing process and PDMS cylinders parallel to the substrate surface are obtained. The surface chemistry based on SoC permits an efficient etching process into the underlying silicon substrate. The etching process is performed under dedicated pulsed plasma etching conditions. Fifteen nanometer half-pitch dense line/space features are obtained with a height up to 90 nm.

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“…Indeed, it is known that most of the bromine incorporated in SiO 2 films exposed to HBr-based plasma desorbs through hydrolysis when the wafer is exposed to moist ambient. 24 The high water concentration in HBr/ O 2 / Ar plasma 32,33 as well as O radicals from the plasma 24 are susceptible to lead to the same oxidation mechanism of the SiBr x layer through the thin oxide. Ex situ XPS analyses ͑not presented here͒ of the thin oxide exposed to the cw HBr/ O 2 / Ar process confirm that less than 1 at.…”

Section: A Oxidation Mechanism Through the Thin Gate Oxidementioning

confidence: 99%

Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing

Petit-Etienne¹,

Darnon²,

Vallier³

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Plasma oxidation of the c-Si substrate through a very thin gate oxide layer can be observed during HBr/O2/Ar based plasma overetch steps of gate etch processes. This phenomenon generates the so-called silicon recess in the channel and source/drain regions of the transistors. In this work, the authors compare the silicon recess generated by continuous wave HBr/O2/Ar plasmas and synchronous pulsed HBr/O2/Ar plasmas. Thin SiO2 layers are exposed to continuous and pulsed HBr/O2/Ar plasmas, reproducing the overetch process conditions of a typical gate etch process. Using in situ ellipsometry and angle resolved X-ray photoelectron spectroscopy, the authors demonstrate that the oxidized layer which leads to silicon recess can be reduced from 4 to 0.8 nm by pulsing the plasma in synchronous mode.

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Synchronous Pulsed Plasma for Silicon Etch Applications

Cited by 17 publications

References 15 publications

Cupric Oxide Nanostructures from Plasma Surface Modification of Copper

Cupric Oxide Nanostructures from Plasma Surface Modification of Copper

Pulsed Transfer Etching of PS–PDMS Block Copolymers Self-Assembled in 193 nm Lithography Stacks

Reducing damage to Si substrates during gate etching processes by synchronous plasma pulsing

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