“…According to reports, the abatement of the V oc and FF was detrimentally affected by the interfacial defects-induced nonradiative recombination (NRR). − Due to the inherent polycrystalline nature, the perovskite (taking MAPbI 3 as an example) crystallization process inevitably brings about intrinsic defects within the perovskite grain boundaries (GBs) and interfaces including vacancies (i.e., V MA , V Pb , and V I ), interstitials (i.e., MA i , Pb i , and I i ), and antisite substitutions (i.e., Pb I , MA I, MA Pb , I Pb , I MA , and Pb MA ). ,, Among all the defects, the antisite substitutions are classified as deep-level defects, which are prone to capture photogenerated carriers and reduce the charge density at steady state. Vacancies and interstitials are generally considered as the shallow level defects, causing local band bending and phase segregation . As a result, a decreased V oc could be observed .…”