Synaptic transistors with human brain-like fJ energy consumption <i>via</i> double oxide semiconductor engineering for neuromorphic electronics

Cho, Seong‐In; Jeon, Jae Ho; Kim, Joo Hyung; Lee, Seung Hee; Jeong, Wooseok; Kim, Jin-Gyu; Kim, Geunyoung; Kim, Kyung Min; Park, Sang‐Hee Ko

doi:10.1039/d1tc01451j

Cited by 23 publications

(18 citation statements)

References 67 publications

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“…The synaptic transistor was operated in a similar environment to the human brain (temperature 25 • C, relative humidity 50%). The proposed synaptic transistor had a low energy consumption of 0.269 fJ when performing a spike operation [125].…”

Section: Neuromorphic Application By Electrical Operationmentioning

confidence: 99%

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

2022

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Thin−film transistors using metal oxides have been investigated extensively because of their high transparency, large area, and mass production of metal oxide semiconductors. Compatibility with conventional semiconductor processes, such as photolithography of the metal oxide offers the possibility to develop integrated circuits on a larger scale. In addition, combinations with other materials have enabled the development of sensor applications or neuromorphic devices in recent years. Here, this paper provides a timely overview of metal−oxide−based thin−film transistors focusing on emerging applications, including flexible/stretchable devices, integrated circuits, biosensors, and neuromorphic devices. This overview also revisits recent efforts on metal oxide−based thin−film transistors developed with high compatibility for integration to newly reported applications.

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Section: Neuromorphic Application By Electrical Operationmentioning

confidence: 99%

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

2022

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“…Human activities are accompanied by the consumption of various energy sources, and energy problems have gradually become the main factor restricting regional development [ 1 , 2 ]. However, the total energy consumption of various buildings is increasing year by year and building energy conservation and emission reduction have gradually become a new topic.…”

Section: Introductionmentioning

confidence: 99%

Application of Nanocomposite Energy Storage Materials in Green Building Design

Xu¹

2022

International Journal of Analytical Chemistry

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In order to solve the problem of the application of composite phase change heat storage materials in building energy conservation, the author proposes the application of nanocomposite energy storage materials in green building design. Modified carbon nanotubes were prepared by mixed acid oxidation and ball milling, and composited with stearic acid to prepare phase change heat storage materials. Modified carbon nanotubes were prepared by mixed acid oxidation and ball milling and composited with stearic acid to prepare phase change heat storage materials. Experimental results show that acidified carbon nanotubes have a hindering effect on the thermal diffusion of stearic acid molecular segments so that the thermal conductivity of carbon nanotubes added with a mass fraction of 1% is only 1.3 times higher than that of pure stearic acid. Conclusion. Nanocomposite energy storage materials have excellent application prospects in green building design.

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Section: Igzo-based Electronic- And/or Photonic-synaptic Devicesmentioning

confidence: 99%

“…A material that involves mobile ions is called an electrolyte. The mobile ions within the electrolyte are drifted depending on the polarity and magnitude of the gate bias, resulting in electric-double-layer (EDL) formation or an electrochemical doping effect. , EDL refers to the formation of two thin layers with opposite charges at the electrolyte/semiconductor and gate electrode/electrolyte interfaces. − IGZO TFTs employing EDL have shown very promising device performances of ultralow operating voltage, flexibility, and air stability . The synaptic transistor can emulate the STP characteristic by redistributing the polarized mobile ions in electrolyte under a low gate bias.…”

Section: Igzo-based Electronic- And/or Photonic-synaptic Devicesmentioning

confidence: 99%

“…However, the mobile ions can penetrate the channel under the high gate bias, inducing LTP characteristics. Tremendous efforts have been made to develop the EDL-based IGZO TFTs for electronic- and/or photonic-synaptic devices using polymer, , ion gel, and solid-state electrolyte. − Artificial optoelectronic synapses using chitosan and sodium-incorporated Al 2 O 3 are introduced in the Advanced Application section. − As for a solid-state electrolyte, 0.269 fJ per spike, which is lower than that in the human brain (∼10 fJ), was demonstrated by an IZO/IGZO artificial electronic synaptic transistor with three terminals employing SiO 2 . A 30 nm-thick SiO 2 , prepared by the low-temperature plasma-enhanced atomic layer deposition (PEALD) at 200 °C, was used as an EDL gate dielectric.…”

Section: Igzo-based Electronic- And/or Photonic-synaptic Devicesmentioning

confidence: 99%

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Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

Jang

Park

Kang

et al. 2022

ACS Appl. Electron. Mater.

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Brain-inspired neuromorphic computing emulates the biological functions of the human brain to achieve highly intensive data processing with low power consumption. In particular, spiking neural networks (SNNs) that consist of artificial synapses can process spatiotemporal information while enabling energy-efficient neuromorphic computations. Artificial synapses are a key element of sophisticated neuromorphic hardware, so a significant amount of research has been conducted to develop various materials and device structures. Of these, we assess amorphous InGaZnO (IGZO)-based synaptic transistors that have exhibited properties suitable for emerging hybrid optoelectronic neuromorphic systems. Here, we describe the fundamental principles of neuromorphic computations, neuron circuits, and synaptic devices according to recent studies. IGZO-based transistors are discussed, from their material properties to various device physics for electronic- and/or photonic-neuromorphic systems with extraordinary biological emulations.

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Synaptic transistors with human brain-like fJ energy consumption via double oxide semiconductor engineering for neuromorphic electronics

Abstract: Neuromorphic devices that mimic a human brain have attracted significant attention in the field of next-generation semiconductors. The human brain can efficiently process information with low power consumption. Several energy...

Cited by 23 publications

References 67 publications

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

Recent Advances in Metal-Oxide Thin-Film Transistors: Flexible/Stretchable Devices, Integrated Circuits, Biosensors, and Neuromorphic Applications

Application of Nanocomposite Energy Storage Materials in Green Building Design

Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing

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