Symmetry-forbidden laser-induced voltages in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">YBa</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cu</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xm

Chang, C. L.; Kleinhammes, Alfred; Moulton, W. G.; Testardi, L. R.

doi:10.1103/physrevb.41.11564

Cited by 111 publications

(55 citation statements)

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“…Large transverse laser-induced voltages (LIV) were firstly observed in the YBa 2 Cu 3 O 7-d (YBCO) thin film grown on a miscut substrate [1]. The voltage signals are believed to arise from the off-diagonal term of the Seebeck tensor along the thin film surface, which is present in the anisotropic layered materials when an inclined crystal orientation is constructed [2,3].…”

Section: Introductionmentioning

confidence: 99%

Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2−x Ce x CuO4 thin films

et al. 2015

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Large laser-induced thermoelectric voltages (LITVs) are measured in the electron-doped Nd 2-x Ce xCuO 4 thin films grown on the vicinal-cut SrTiO 3 substrates by pulsed laser deposition. The dependence of LITV signals upon the doping carrier density is investigated by changing the Ce content of the films. The optimum Ce dopant corresponding to the largest voltage is found and is attributed to the two-dimensional transport behaviors of the localized electrons. The shorter laser irradiation always induces the larger voltage signals in samples with richer Ce content, suggesting the optimum dopant level is sensitive to the wavelength of excitation source. Thus, the behaviors of LITV signals are resulted from both effects of the anisotropic thermoelectric transport and the optical properties of the thin films. The doping dependence related with an anisotropic charge transport may come from the change in carrier density and the modification in energy band configuration.

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Section: Introductionmentioning

confidence: 99%

Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2−x Ce x CuO4 thin films

et al. 2015

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“…Large voltaic signals in response to laser irradiation of YBa2Cu307_^ films in the normalconducting state have been observed by several groups [1][2][3][4]. Earlier discussed phenomena for explanation of the signals, as tensorial photoelectric effects [5] and piezo-and pyroelectricity [6] can be ruled out meanwhile by experimental observations: the voltaic signals are independent of light polarization, and continuous voltages are obtained in case of continuous-irradiation experiments [3].…”

mentioning

confidence: 78%

Thermoelectric Effect in Normal-State YBa ₂ Cu ₃ O _7-δ Films

et al. 1994

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Abstract. -Signal pulses of several 100 volts and currents of several amperes have been obtained at lateral surface contacts on normal-state YBa2Cu307_^ films in response to pulsed laser irradiation. The signals are shown to be of thermoelectric origin. Thermoelectric fields transverse to the laser-induced temperature gradient are due to the anisotropy of the thermopower in YB2^Cuz01_i giving rise to non-zero off-diagonal elements a a of the Seebeck tensor for films prepared with a tilt angle a between the film c-axis and the film surface normal. Large-tilt-angle films (up to a = 20°) could be grown on specially cut substrates and may be useful as almost wavelength-independent room temperature radiation detectors. In this letter experiments are reported which proof that the voltaic signals are purely of thermoelectric origin. A comparison of signals induced by laser irradiation, or, alternatively, by a thermal heat source, shows that the signal strength is solely related to the flow of thermal energy through the film. Furthermore, it is shown that the voltaic signals are proportional to the tilt angle a between the crystallographic film c-axis and the film surface normal, in accordance with the tensorial Seebeck effect.The thermoelectric field due to the Seebeck effect is given by where S is the Seebeck tensor and VT the temperature gradient. With respect to the coordinate system defined in fig. 1, the Seebeck tensor for YBa2Cu307_4> depending on the tilt angle a, and taking into account the values of main anisotropy of the thermopower Sc along the crystallographic c-axis and Sab in the (a, 6)-plane [7], is of the form

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“…This same laser pulse produced no photoresponse in the superconducting state since more energy was needed. The figure shows the delayed and weaker photoresponse at 57 K obtained with the pulse of higher energy density 4.5 mJ/cm 2 (Chang et al, 1990).…”

Section: Photoconductivitymentioning

confidence: 96%

Transport properties

Poole

2014

Superconductivity

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Symmetry-forbidden laser-induced voltages inYBa2Cu3

Cited by 111 publications

References 6 publications

Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2−x Ce x CuO4 thin films

Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2−x Ce x CuO4 thin films

Thermoelectric Effect in Normal-State YBa ₂ Cu ₃ O _7-δ Films

Transport properties

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Symmetry-forbidden laser-induced voltages inYBa2Cu3

Cited by 111 publications

References 6 publications

Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2−x Ce x CuO4 thin films

Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd2−x Ce x CuO4 thin films

Thermoelectric Effect in Normal-State YBa 2 Cu 3 O 7-δ Films

Transport properties

Contact Info

Product

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Thermoelectric Effect in Normal-State YBa ₂ Cu ₃ O _7-δ Films