2012
DOI: 10.1063/1.4726276
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Symmetry-dependent transport properties and magnetoresistance in zigzag silicene nanoribbons

Abstract: First principles calculations are performed to study the transport properties of zigzag silicene nanoribbons (ZSiNRs). ZSiNRs show symmetry-dependent transport properties similar to those of zigzag graphene nanoribbons, although the σ mirror plane is absent. Even-N and odd-N ZSiNRs have very different current-voltage relationships, which can be attributed to the different parity of their π and π* bands under c2 symmetry operation with respect to the center axis. Moreover, magnetoresistance effect is observed i… Show more

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Cited by 131 publications
(83 citation statements)
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“…2. Our first-principle calculations indicate that the left panel, 4-ZSiNR-H 2 , has an antiferromagnetic ground state, while the right panel, 4-ZSiNR-H, has a ferromagnetic one, which are consistent with their previous magnetism studies 31 . From the band structures shown in Figs.…”
Section: Resultssupporting
confidence: 90%
“…2. Our first-principle calculations indicate that the left panel, 4-ZSiNR-H 2 , has an antiferromagnetic ground state, while the right panel, 4-ZSiNR-H, has a ferromagnetic one, which are consistent with their previous magnetism studies 31 . From the band structures shown in Figs.…”
Section: Resultssupporting
confidence: 90%
“…Electronic, mechanical and magnetic properties of SiNRs have been studied recently by first-principle numerical methods [8][9][10][11]. In particular, electronic transport properties of SiNRs with zigzag edges (zSiNRs) have revealed a magnetoresistance effect [9] associated with transition of the edge magnetism from ferromagnetic to antiferromagnetic ordering.…”
Section: Introductionmentioning
confidence: 99%
“…Xu et al 43 study the transport properties of finite ZSiNRs connecting two planar silicene electrodes and find that by using a magnetic field to switch the magnetic coupling between the two edges, a maximum optimistic MR up to 1960% is obtained because of a large current difference between the semiconducting AFM and metallic FM states. Besides, Kang et al 44 predicted a MR of up to 10 6 % in even-n ZSiNRs through switching the spin configuration of the two electrodes from parallel to anti-parallel configuration. The various measures to modulate the devices based on silicene show that it could provide flexibility for device design and is of great potential in the future nanoscale spintronics.…”
Section: Spin Field Effect Transistormentioning
confidence: 99%