Symmetry-dependent transport behavior of graphene double dots

Marconcini, Paolo; Macucci, Massimo

doi:10.1063/1.4827382

Cited by 17 publications

(13 citation statements)

References 50 publications

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“…The effect on transport of the boron impurities is strictly related to the details of the (short-range) atomistic potential around the boron dopants. Therefore, an envelope-function approach such as that of References [ 33 , 34 , 35 , 36 ] would not be accurate enough, and more computationally demanding atomistic models are needed. On the other hand, a complete ab-initio simulation of the considered device which includes thousands of atoms would not be numerically feasible.…”

Section: Methodsmentioning

confidence: 99%

Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons

2018

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Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the ION/IOFF ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green’s function approach, we demonstrate a promising increase of the ION/IOFF ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior.

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Section: Methodsmentioning

confidence: 99%

Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons

2018

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“…Since (in the hypotheses of quasi-equilibrium and low temperature) (21) (with α = E − U), if small variations are considered the quantum capacitance can be expressed as…”

Section: Fig 2 Equivalent Circuit That Relates the Variations Of Thementioning

confidence: 99%

“…A numerical study of the conductance and noise properties of graphene‐based devices can be performed with different levels of approximation. For small devices, containing a limited number of atoms, an ab initio or tight‐binding simulation [18] of the whole device is possible, whereas for larger graphene samples an envelope‐function approach, based on the solution of the Dirac equation [20, 21], is generally preferred, in order to reduce the computational times. A very efficient solution of the Dirac equation in graphene ribbons can be performed, for example, using a Fourier‐based approach [14, 21] in the reciprocal space or, equivalently, a sinc‐based method [22] in the direct space.…”

Section: Introductionmentioning

confidence: 99%

Approximate calculation of the potential profile in a graphene‐based device

Marconcini

Macucci

2015

IET Circuits, Devices & Systems

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The study of the transport and noise properties of graphene-based devices requires the computation of the potential profile as a function of the applied bias voltages. However, an exact solution for the potential profile involves a complete self-consistent treatment of the electrostatic and transport equations, which is computationally very expensive. Here, generalising the approach proposed by Das et al., the authors describe an approximate method that allows the evaluation of the potential profile by properly modifying, as a function of the bias voltages applied to the gates, the profile for a reference bias point, which is supposed to be known. The proposed approach is not very demanding from the computational point of view and can be useful for simulations aimed at the interpretation of experimental results or at device design

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“…Its dispersion relations around the degeneration points between conduction and valence bands (the so-called Dirac points, i.e., the charge neutrality points) are linear and thus in graphene charge carriers present a zero effective mass. Since its isolation from graphite, it has been the focus of a large research effort (which has more recently extended to a wider family of two-dimensional materials [32][33][34]), because it possesses very attractive electrical, thermal, optical, and mechanical properties [35][36][37][38][39][40][41][42][43][44][45][46][47]. Moreover, graphene exhibits very uncommon physical phenomena [48][49][50], typical of relativistic mechanics, because its effective mass transport equation coincides with the Dirac equation [18,51,52] (the wave equation which describes relativistic spin-1/2 particles).…”

Section: Introductionmentioning

confidence: 99%

Theoretical Comparison between the Flicker Noise Behavior of Graphene and of Ordinary Semiconductors

Macucci

Marconcini

2020

Journal of Sensors

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Graphene is a material of particular interest for the implementation of sensors, and the ultimate performance of devices based on such a material is often determined by its flicker noise properties. Indeed, graphene exhibits, with respect to the vast majority of ordinary semiconductors, a peculiar behavior of the flicker noise power spectral density as a function of the charge carrier density. While in most materials flicker noise obeys the empirical Hooge law, with a power spectral density inversely proportional to the number of free charge carriers, in bilayer, and sometimes monolayer, graphene a counterintuitive behavior, with a minimum of flicker noise at the charge neutrality point, has been observed. We present an explanation for this stark difference, exploiting a model in which we enforce both the mass action law and the neutrality condition on the charge fluctuations deriving from trapping/detrapping phenomena. Here, in particular, we focus on the comparison between graphene and other semiconducting materials, concluding that a minimum of flicker noise at the charge neutrality point can appear only in the presence of a symmetric electron-hole behavior, a condition characteristic of graphene, but which is not found in the other commonly used semiconductors.

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Symmetry-dependent transport behavior of graphene double dots

Cited by 17 publications

References 50 publications

Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons

Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons

Approximate calculation of the potential profile in a graphene‐based device

Theoretical Comparison between the Flicker Noise Behavior of Graphene and of Ordinary Semiconductors

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