Symmetrical current–voltage characteristic of a metal–semiconductor–metal structure of Schottky contacts and parameter retrieval of a CdTe structure

Elhadidy, H.; Šikula, Josef; Franc, J.

doi:10.1088/0268-1242/27/1/015006

Cited by 46 publications

(33 citation statements)

References 26 publications

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“…Furthermore, Elhadidy et al [32] modeled the symmetrical, non-linear current to voltage characteristics of a metal-semiconductor-metal structure of two metallic Schottky contacts fabricated to a p-type semiconductor by treating the semiconductor as a resistor sandwiched between two identical head-to-head Schottky barriers. Each one of the two Schottky barriers is modeled as a sub-circuit consisting of a diode in parallel to a resistor.…”

Section: Equivalent Circuits For Matching Experimental Resultsmentioning

confidence: 99%

“…In the present work an equivalent circuit model is developed by following the concept introduced by Elhadidy et al [32] consisting of a memristor sandwiched between two identical head-to-head Schottky barriers. The Schottky barriers are represented by sub-circuits consisting of a diode in parallel to a resistor and result to a slight modification of the memristive curve.…”

Section: Equivalent Circuits For Matching Experimental Resultsmentioning

confidence: 99%

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Computational Study on the Electrical Behavior of Silicon Nanowire Memristive Biosensors

et al. 2015

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Abstract-In this paper, a complete study is carried out investigating the relationship between the biosensing and the electrical characteristics of freestanding two-terminal Schottky-barrier silicon nanowires. This paper successfully reproduces computationally the electrical behavior obtained experimentally from the nanowire devices before and after the surface biomodification. Throughout modeling and simulations, this paper confirms that the experimental results obtained from the electrical characterization of bare two-terminal Schottky-barrier silicon nanowires present current-to-voltage characteristics fully equivalent to that of a pure memristor device, according to the literature. Furthermore, this paper shows that the voltage gap appearing in the current-to-voltage characteristics for nanowires with biomodified surface is related to capacitive effects due to minority carriers in the nanowire and it is also indicated that those effects are strongly affected by the concentration of antigens uptaken on the device surface. Overall, this paper confirms the implication of the memristive effect for biosensing applications and therefore, demonstrates the memristive biosensors.

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Section: Equivalent Circuits For Matching Experimental Resultsmentioning

confidence: 99%

Section: Equivalent Circuits For Matching Experimental Resultsmentioning

confidence: 99%

Computational Study on the Electrical Behavior of Silicon Nanowire Memristive Biosensors

et al. 2015

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“…For simulating the electrical response of the bare silicon nanowire devices under study, an equivalent circuit model is developed in Fig.3, taking inspiration from the concept that is introduced by Elhadidy et al [17] but consisting of a memristor sandwiched between two identical head-to-head Schottky barriers. The Schottky barriers are represented by sub-circuits consisting of a diode in parallel to a resistor and result to a slight modification of the memristive curve.…”

Section: Resultsmentioning

confidence: 99%

"Modeling memristive biosensors"

et al. 2015

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Abstract-In the present work, a computational study is carried out investigating the relationship between the biosensing and the electrical characteristics of two-terminal Schottkybarrier silicon nanowire devices. The model suggested successfully reproduces computationally the experimentally obtained electrical behavior of the devices prior to and after the surface bio-modification. Throughout modeling and simulations, it is confirmed that the nanofabricated devices present electrical behavior fully equivalent to that of a memristor device, according to literature. Furthermore, the model introduced successfully reproduces computationally the voltage gap appearing in the current to voltage characteristics for nanowire devices with biomodified surface. Overall, the present study confirms the implication of the memristive effect for bio sensing applications, therefore demonstrating the Memristive Biosensors.

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“…At higher voltages, the Schottky barrier between silicon and aluminium bonding pads comes into play [26]. Computation of the mean zero-bias resistance 〈R 0 〉=13.6±0.9 kΩ implies that the actual variations in h SOI remain below 7 %.…”

Section: Measurementsmentioning

confidence: 99%

Influence of Substrate on Plasmon-Induced Absorption Enhancements

et al. 2015

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A set of periodic plasmonic nanostructures is designed and fabricated as a means to investigate light absorption in single-crystal silicon thin-film structures with siliconon-insulator (SOI) wafers as a model system. It is shown both computationally and experimentally that plasmon-induced absorption enhancement is remarkably higher for such devices than for thick or semi-infinite structures or for the thin-film amorphous silicon solar cells reported in the literature. Experimental photocurrent enhancements of the orders of 12 and 20 are demonstrated for non-optimized 2200-nm-thick photoconductive and 300-nm-thick photovoltaic test structures, respectively. Theoretical absorption enhancements as high as 80 are predicted to be achievable for the similar structures. The features of the spectral enhancements observed are attributed to several interacting resonance phenomena: not just to the favourable scattering of light by the periodic plasmonic nanoparticle arrays into the SOI device layer and coupling to the waveguide modes interacting with the plasmonic array but also to the Fabry-Pérot type interferences in the layered structure. We show that the latter effect gives a significant contribution to the spectral features of the enhancements, although frequently ignored in the discussions of previous reports.

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Symmetrical current–voltage characteristic of a metal–semiconductor–metal structure of Schottky contacts and parameter retrieval of a CdTe structure

Cited by 46 publications

References 26 publications

Computational Study on the Electrical Behavior of Silicon Nanowire Memristive Biosensors

Computational Study on the Electrical Behavior of Silicon Nanowire Memristive Biosensors

"Modeling memristive biosensors"

Influence of Substrate on Plasmon-Induced Absorption Enhancements

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