Symmetric P-n-P InAlAs/InGaAs double-heterojunction bipolar transistors fabricated with Si-ion implantation

Abstract

We have successfully fabricated symmetric P-n-P InAIAs/InGaAs double-heterojunction bipolar transistors (DHBT's) using self-aligned Si-ion implantation and refractory emitter contacts with current gains of 115 and 30 in the emitterup and the emitter-down configurations, respectively. Two thin Be-doped In,~,,Ga,,,,As layers inserted on both sides of base lead to the excellent I -Y characteristics. We have shown that hole injection from the external portions of the emitter is expected to be suppressed by a factor of lo-' to at a collector current density of about lo3 A/cm2, which is much smaller than that of N-p-n GaAs/AIGaAs HBT's, and our DHBT's are promising devices for application to circuits with low power dissipation.