Switching photodiodes based on (2D/3D) PdSe<sub>2</sub>/Si heterojunctions with a broadband spectral response

Aftab, Sikandar; Samiya,; Liao, Wugang; Iqbal, Muhammad Waqas; Ishfaq, Mavra; Ramachandraiah, Karna; Ajmal, Hafiz Muhammad Salman; Haque, Hafiz Mansoor Ul; Yousuf, Saqlain; Ahmad, Zaheer; Khan, Muhammad Usman; Rehman, Atteq Ur; Iqbal, Muhammad Zahir

doi:10.1039/d0tc05894g

Cited by 26 publications

(25 citation statements)

References 60 publications

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“…7d-f). Aftab et al [97] combined n-PdSe 2 with p-type Si substrate by an ME technique. For fine electrodes, e-beam lithography was performed to produce Al 2 O 3 (25 nm thick) films.…”

Section: Group-ten Dichalcogenide-based Devicesmentioning

confidence: 99%

Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

et al. 2021

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Silicon-based semiconductor technology has made great breakthroughs in the past few decades, but it is reaching the physical limits of Moore's law. In recent years, the presence of two-dimensional (2D) materials was regarded as an opportunity to break the limitation of traditional siliconbased optoelectronic devices owing to their special structure and superior properties. In consideration of the widely studied hybrid integration of 2D material detectors and 3D siliconbased systems, in this paper, the basic properties of several 2D materials used in photodetectors are summarized. Subsequently, the progress in silicon photonic integrated photodetectors based on 2D materials is reviewed, followed by the summarization of the device structure and main performances. Then, the combination of some other traditional and 2D devices is discussed as a supplement. Finally, the prospective development of the hybrid 2D/3D silicon-based heterostructures is expected.

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“…7d-f). Aftab et al [97] combined n-PdSe 2 with p-type Si substrate by an ME technique. For fine electrodes, e-beam lithography was performed to produce Al 2 O 3 (25 nm thick) films.…”

Section: Group-ten Dichalcogenide-based Devicesmentioning

confidence: 99%

Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

et al. 2021

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“…18,25–29 Because of this, they have been the focus of a lot of research in field-effect transistors (FETs) and other nanodevices that use FETs. 30–36…”

Section: Introductionmentioning

confidence: 99%

“…18,[25][26][27][28][29] Because of this, they have been the focus of a lot of research in field-effect transistors (FETs) and other nanodevices that use FETs. [30][31][32][33][34][35][36] High-performance FET devices cannot be made directly from MX 2 s due to the high resistance to contact between the MX 2 s and the metal substrate. 34,37,38 As a result, one of the most important challenges that must be met is lowering the resistance to contact between the MX 2 s and the metal substrate.…”

Section: Introductionmentioning

confidence: 99%

Recent advances in TMD interfaces with seamless contacts

Aftab

Iqbal

et al. 2022

J. Mater. Chem. C

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“…Transition metal dichalcogenides (TMDCs) have shown many promising applications when it comes to the next-generation applications, including switching photodiodes, , photodetectors, ,− spintronics, field-effect transistors, piezotronics, and superconductors . The band gap of many TMDC ranges from 1 to 2 eV. , Particularly, the TMDCs based on molybdenum and tungsten are promising materials due to their prominent optoelectronic and semiconducting properties with ultrathin nature. , Other 2D materials such as platinum disulfide (PtS 2 ), PdSe 2 , and PtSe 2 are emerging as the most exciting TMD materials due to their high mobility features. − PtS 2 can be transformed into monolayers or multilayers or into a bulk form through a technique named mechanical exfoliation, which is done using an adhesive tape, and shows a band gap of 0.3 eV in the bulk form . The structure of the PtS 2 monolayer is formed by the in-plane S–Pt–S atoms in which two layers/sheets of S atoms sandwich one layer/sheet of Pt atoms packed in a hexagonal structure .…”

Section: Introductionmentioning

confidence: 99%

Platinum Disulfide (PtS₂) and Silicon Pyramids: Efficient 2D/3D Heterojunction Tunneling and Breakdown Diodes

Aftab

Samiya

Iqbal

et al. 2022

ACS Appl. Electron. Mater.

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p−n junctions constructed from the group-10 TMDCs, or namely, transition metal dichalcogenides with an intrinsic layered structure, are not considerably reported. This study presents a mechanical exfoliation-based technique to prepare PtS 2 /Si pyramid p−n junctions for an investigation of tunneling and breakdown diodes. The demonstrated p−n diode exhibited a high rectifying performance reaching a rectification ratio (I f /I r ) of ∼7.2 × 10 4 at zero gate bias with an ideality factor of ∼1.5. The Zener tunneling was observed at a low reverse bias region of breakdown voltage (from −6 to −1.0 V) at various temperatures (50 to 300 K), and it was a negative coefficient of temperature. Conversely, for the greater breakdown voltage regime (−15 to −11 V), the breakdown voltage increased with the increased temperature (200 to 300 K), indicating a positive coefficient of temperature. Therefore, this phenomenon was attributed to the avalanche breakdown. The p−n junctions displayed photovoltaic characteristics under the illumination of visible light (500 nm), such as a high responsivity (R ph ) and a photo gain (G) of 11.88 A/W and 67.10, respectively. The maximum values for both the open-circuit voltage (V OC ) and the short-circuit current (I SC ) were observed to be 0.45 V and 10 μA, respectively, at an input intensity of light of 70.32 mW/cm 2 . The outcomes of this study suggest that PtS 2 / Si pyramid p−n junctions may be employed in numerous optoelectronic devices including photovoltaic cells, Zener tunneling diodes, avalanche breakdown diodes, and photodetectors.

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Switching photodiodes based on (2D/3D) PdSe₂/Si heterojunctions with a broadband spectral response

Abstract: Noble metal dichalcogenides (NMDs) are two-dimensional (2D) layered materials that exhibit outstanding thickness-dependent tunable-bandgaps that can be suitable for various optoelectronic applications.

Cited by 26 publications

References 60 publications

Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

Recent advances in TMD interfaces with seamless contacts

Platinum Disulfide (PtS₂) and Silicon Pyramids: Efficient 2D/3D Heterojunction Tunneling and Breakdown Diodes

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Switching photodiodes based on (2D/3D) PdSe2/Si heterojunctions with a broadband spectral response

Abstract: Noble metal dichalcogenides (NMDs) are two-dimensional (2D) layered materials that exhibit outstanding thickness-dependent tunable-bandgaps that can be suitable for various optoelectronic applications.

Cited by 26 publications

References 60 publications

Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

Recent advances in TMD interfaces with seamless contacts

Platinum Disulfide (PtS2) and Silicon Pyramids: Efficient 2D/3D Heterojunction Tunneling and Breakdown Diodes

Contact Info

Product

Resources

About

Switching photodiodes based on (2D/3D) PdSe₂/Si heterojunctions with a broadband spectral response

Platinum Disulfide (PtS₂) and Silicon Pyramids: Efficient 2D/3D Heterojunction Tunneling and Breakdown Diodes