Switching phenomena in amorphous carbon

Antonowicz, K.; Jesmanowicz, A.; Wieczorek, J.

doi:10.1016/0008-6223(72)90012-7

Cited by 18 publications

(8 citation statements)

References 18 publications

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“…The superconducting hypothesis [4] seems to be promising in explaining the results obtained in [1][2][3] as well as the switching behavior of NG films and our results described elsewhere [13][14][15][16]. Of course this hypothesis now is far from its proof.…”

Section: Resultssupporting

confidence: 55%

“…Attention has been paid to the conductivity switching behavior in the carbon graphite-like materials. Antonowicz et al more than 30 years ago investigated the conductive properties of the glassy carbon [1] and its evaporated deposits [2] and has found out the effect of conductivity jump up to three orders of magnitude under critical current of the order of tens of milliamps. The change of conductivity was reversible, and the relaxation time was about some days.…”

Section: Introductionmentioning

confidence: 99%

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Nanographite Films for Solid State Electronic Applications

Lebedev

2013

Advances in High Energy Physics

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The structure and properties of nanographite films useful for applications in solid state devices are described. The possibility to use low conducting state of nanographite film for detecting radiation in the segmented solid state detectors is considered. Other interesting phenomena include the field effect conductivity switching which can be used in contactless current limiters and circuit breakers, therf-to-dcconversion which can be utilized in microwave and photo detectors, and light emitting subsequent to the conductivity switching with possible application as light sources. The possible underlying gears of the mentioned effects are discussed.

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Section: Resultssupporting

confidence: 55%

Section: Introductionmentioning

confidence: 99%

Nanographite Films for Solid State Electronic Applications

Lebedev

2013

Advances in High Energy Physics

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“…Attention has been paid to the switching behavior in the carbon graphite like materials. K. Antonowicz more than 30 years ago investigated the conductive properties of the glassy carbon [1] and its evaporated deposits [2] and has found out the effect of jump of conductivity up to three orders of magnitude. The change of conductivity was reversible, and the relaxation time made some days.…”

mentioning

confidence: 99%

Field-effect switching in nano-graphite films

Lebedev¹

2014

Journal of Physics and Chemistry of Solids

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The effect of electrical resistivity switching in nano -graphite films is described. In difference with cases published elsewhere the switching in nano -graphite films occurs from stable high conductive to metastable low conductive state. Critical current of switching varies in the range 0.01-0.5A and can be increased up to values appropriate for using of nano -graphite samples in power grids as contact-less current limiters and circuit breakers. The possible mechanisms of switching phenomenon in nano -graphite films are discussed.Physical and electromagnetic properties of the carbon and its derivatives are the subjects of constant interest and extensive studies for many years. Attention has been paid to the switching behavior in the carbon graphite like materials. K. Antonowicz more than 30 years ago investigated the conductive properties of the glassy carbon [1] and its evaporated deposits [2] and has found out the effect of jump of conductivity up to three orders of magnitude. The change of conductivity was reversible, and the relaxation time made some days.B.Z.Jang and L.Zhao also studied the switching behavior of carbonized materials [3]. They study the partially carbonized polyacrylnitride fibbers, which were observed to undergo a resistivity change between 2 and 4 orders of magnitude at a transition temperature typically in the range of 98°C to 200°C. The current-voltage curves exhibited an initial supercurrent-like increase, followed by a rapid drop to a high resistance state, and then a rise in current

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“…In 1972 Ref. [292] first reported RS in 10nm thick evaporated a-C films sandwiched between Al electrodes, reporting 100,000 switching cycles. Ref.…”

Section: Amorphous Carbon As Switching Media For Rrammentioning

confidence: 99%

“…Ref. [292] found that a forming step is needed to create a CF and activate RS. Switching only occurred by applying a positive voltage to the bottom Al electrode, while opposite polarity was needed for the RESET [292] .…”

Section: Amorphous Carbon As Switching Media For Rrammentioning

confidence: 99%

Graphene and Related Materials for Resistive Random Access Memories

Hui

Grustan‐Gutierrez

Long

et al. 2017

Adv Elect Materials

187

191

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Graphene and related materials (GRMs) are promising candidates for the fabrication of resistive random access memories (RRAM). Here, we analyze, classify and evaluate this emerging field, and summarize the performance of the RRAM prototypes using GRMs. Graphene oxide, amorphous carbon films, transition metal dichalcogenides, hexagonal boron nitride and black phosphorous can be used as resistive switching media, in which the switching can be governed either by the migration of intrinsic species or penetration of metallic ions from adjacent layers.Graphene can be used as electrode to provide flexibility and transparency, as well as an interface layer between the electrode and dielectric to block atomic diffusion, reduce power consumption, suppress surface effects, limit the number of conductive filaments in the dielectric, and improve device integration. GRMs-based RRAMs fit some non-2 volatile memory technological requirements like low operating voltages <1V and switching times <10 ns but others, like retention >10 years, endurance >10 9 cycles and power consumption ~10 pJ/transition still remain a challenge. More technologyoriented studies including reliability and variability analyses may lead to the development of GRMs-based RRAMs with realistic possibilities of commercialization. List of acronymsa-C amorphous-Carbon ALD Atomic Layer Deposition APTES 3-Aminopropyltriethoxysilane BD Dielectric Breakdown BLG Bilayer Graphene BP Black Phosphorous CAFM Conductive Atomic Force Microscopy CBRAM Conductive Bridge Random Access Memory CF Conductive Filament CL Current Limitation CMOS Complementary Metal Oxide Semiconductor CVD Chemical Vapor Deposition CVS Constant Voltage Stresses

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Switching phenomena in amorphous carbon

Cited by 18 publications

References 18 publications

Nanographite Films for Solid State Electronic Applications

Nanographite Films for Solid State Electronic Applications

Field-effect switching in nano-graphite films

Graphene and Related Materials for Resistive Random Access Memories

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