Switching Operation of Double-Layer Conductive Bridging RAM Investigated using In-situ Transmission Electron Microscopy

Arita, M.; Hirata, Shuichiro; Takahashi, Akihisa; Hiroi, T.; Jo, Minsik; Tsurumaki‐Fukuchi, Atsushi; Takahashi, Yoshihiro

doi:10.7567/ssdm.2016.b-3-02

Search citation statements

Order By: Relevance

Paper Sections

Select...

Double-layer Cbram1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2020

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The used sample structure was Cu (30) /MoO x(20) /Al 2 O 3 (5) formed on a TiN/Si substrate and was processed via the FIB technique. [82][83][84] The number the parentheses indicates the film thickness in nm. A typical Set curve is shown in Fig.…”

Section: Double-layer Cbrammentioning

confidence: 99%

Filamentary switching of ReRAM investigated by in-situ TEM

Arita

Tsurumaki‐Fukuchi

Takahashi

2020

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The filament operation of resistive random-access memory (ReRAM) was studied via in-situ transmission electron microscopy (in-situ TEM), and the contribution of the conductive filament to the resistance switching was experimentally confirmed. In addition to the operation principles, the device degradation mechanism was studied through repeated write/erase operations. The importance of controlling Cu movement in the switching layer was confirmed for stable CBRAM (conductive bridge random access memory) operations. A device structure with double switching layers and device miniaturization was effective in restricting over accumulation of Cu in the switching layer and localizing the filament. This may improve the robustness of the device against performance degradation.

show abstract