2020
DOI: 10.1021/acsami.0c09501
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Switching of Electron and Ion Conductions by Reversible H2O Sorption in n-Type Organic Semiconductors

Abstract: Polar H 2 O molecules generally act as trapping sites and suppress the electron mobility of n-type organic semiconductors, making chemical design of H 2 O-tolerant and responsive n-type semiconductors an important step toward multifunctional electron−ion coupling devices. The introduction of effective electrostatic interactions between potassium ions (K + ) and carboxylate (−COO − ) anions into the electron-transporting naphthalenediimide πframework enables the design of high-performance H 2 O-tolerant n-type … Show more

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Cited by 10 publications
(27 citation statements)
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References 53 publications
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“…, respectively, at 298 K. 56 The PXRD patterns of both hydrated and dehydrated thin films suggested the formation of highly crystalline states during the H 2 O adsorption−desorption cycle of the 3•(H 2 O) n thin films. 56 From the TAS spectra, the Σμ values of the 3• (H 2 O) 0 , 3•(H 2 O) 2.5 , and 3•(H 2 O) 4.0 thin films were 0.048 ± 0.006, 0.28 ± 0.01, and 0.13 ± 0.01 cm 2 V −1 s −1 , respectively.…”
Section: ■ Introductionmentioning
confidence: 96%
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“…, respectively, at 298 K. 56 The PXRD patterns of both hydrated and dehydrated thin films suggested the formation of highly crystalline states during the H 2 O adsorption−desorption cycle of the 3•(H 2 O) n thin films. 56 From the TAS spectra, the Σμ values of the 3• (H 2 O) 0 , 3•(H 2 O) 2.5 , and 3•(H 2 O) 4.0 thin films were 0.048 ± 0.006, 0.28 ± 0.01, and 0.13 ± 0.01 cm 2 V −1 s −1 , respectively.…”
Section: ■ Introductionmentioning
confidence: 96%
“…Interestingly, hydrated crystals of (K + ) 2 (PCNDI 2− )•(H 2 O) 2.5 exhibited a high electron mobility of 0.28 cm 2 V −1 s −1 in the presence of H 2 O molecules, whereas the electron mobility decreased to 0.04 cm 2 V −1 s −1 for the dehydrated state of (K + ) 2 (PCNDI 2− )•(H 2 O) 0 . 56 An interesting H 2 O response was observed in the design of the electrostatic crystal lattice of the n-type semiconducting materials. Strongly binding electrostatic intermolecular interactions can generate a rigid crystal lattice, wherein even n-type semiconducting materials exhibit H 2 O-tolerant semiconducting behavior.…”
Section: ■ Introductionmentioning
confidence: 99%
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“…Crystals of (Na + ) 2 ( BSNDI 2– ) showed an electron mobility of 0.22 V cm –2 s –1 at 298 K and extremely high thermal stability up to 850 K . Instead of rigid benzene sulfonate units, two flexible propionate (−C 2 H 5 COO – ) groups were introduced into a NDI π-core to form dianionic bis­(propionate)-naphthalenediimide (PCNDI 2– ). , Single-crystal X-ray structural analyses were performed for the hydrated (M + ) 2 ( PCNDI 2– )•(H 2 O) n with M + = Na + , K + , Rb + , and Cs + and revealed not just H 2 O-tolerant but H 2 O-responsive n-type semiconducting behavior coupled with the reversible H 2 O adsorption–desorption behavior and electron mobility switching. The softness and hardness of the cation–anion crystal lattices were systematically modulated by replacing the alkali metal ions, and the electron transport property was dominated by the crystal lattice. , In the case of BSNDI 2– salts, inorganic M + cations, such as Na + , K + , and NH 4 + , were conventionally replaced with organic cations such as CH 3 NH 3 + , C 2 H 5 NH 3 + , (C 2 H 5 ) 2 NH 2 + , and (C 2 H 5 ) 3 NH + .…”
Section: Introductionmentioning
confidence: 99%
“…Crystals of (Na + ) 2 (BSNDI 2− ) showed an electron mobility of 0.22 V cm −2 s −1 at 298 K and extremely high thermal stability up to 850 K. 68 Instead of rigid benzene sulfonate units, two flexible propionate (−C 2 H 5 COO − ) groups were introduced into a NDI π-core to form dianionic bis(propionate)-naphthalenediimide (PCNDI 2− ). 69,70 Singlecrystal X-ray structural analyses were performed for the hydrated (M + ) 2 (PCNDI + , and (C 2 H 5 ) 3 NH + . This significantly changed the molecular assembly structures and showed a dimensional crossover from 2D, 1D, to 0D electronic structures.…”
Section: ■ Introductionmentioning
confidence: 99%