2017
DOI: 10.7567/jjap.56.04ce12
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Switching mechanism in resistive random access memory by first-principles calculation using practical model based on experimental results

Abstract: For the practical use of resistive random access memory (ReRAM), many formation/rupture models of conductive paths are proposed. In this paper, we report both the probability of conductive path formation on grain surfaces and the marked drastic change in conductivity caused by a small number of atoms migrating on grain surfaces, determined by using experimental and calculation results complementarily. Experimental results of resistive switching operating modes suggest that resistance changes at grain boundarie… Show more

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Cited by 2 publications
(1 citation statement)
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“…Resistive switching random access memories (ReRAMs) are one of the most promising candidate for next-generation memory devices owing to their superior characteristics such as simple structure, high density, high operating speeds, and low-power operation. [1][2][3][4][5][6] The basic structure of ReRAMs consists of a switching layer (dielectric) sandwiched between an active-metal electrode and an inert metal electrode. 7) Various materials for the switching layer such as HfO 2 , TiO 2 , Ta 2 O 5 , SiO 2 , Al 2 O 3 , and ZrO 2 have been reported to show resistive switching characteristics.…”
Section: Introductionmentioning
confidence: 99%
“…Resistive switching random access memories (ReRAMs) are one of the most promising candidate for next-generation memory devices owing to their superior characteristics such as simple structure, high density, high operating speeds, and low-power operation. [1][2][3][4][5][6] The basic structure of ReRAMs consists of a switching layer (dielectric) sandwiched between an active-metal electrode and an inert metal electrode. 7) Various materials for the switching layer such as HfO 2 , TiO 2 , Ta 2 O 5 , SiO 2 , Al 2 O 3 , and ZrO 2 have been reported to show resistive switching characteristics.…”
Section: Introductionmentioning
confidence: 99%