Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials 2016
DOI: 10.7567/ssdm.2016.b-1-04
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Switching Mechanism in Resistive Random Access Memory by First-Principles Calculation Using Practical Model Based on Experimental Results

Tsuyoshi Moriyama
1
,
Takahiro Yamasaki
2
,
Sohta Hida
3
et al.
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