Switching in Semiconductor Diodes

Nosov, Yurii R.

doi:10.1007/978-1-4899-6343-7

Cited by 12 publications

(3 citation statements)

References 39 publications

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“…This is as physically expected because an increase in S causes faster annihilation of the excess carriers. A similar effect of S on the back surface of a diode has been given by, for example, Nosov (1969), Choo and Mazur (1970) and Bassett et a1 (1973). cm" and l@ cm-' respectively; A, B and C denote the curves for S = 10 cm s -l , 102 cm S-] and lo3 cm S" respectively.…”

Section: Effect Of S On Pvdsupporting

confidence: 74%

Effect of pn coupling on open-circuit photovoltage decay in a silicon pn junction solar cell

Sharma¹,

Tewary²

1983

J. Phys. D: Appl. Phys.

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A theory of open-circuit photovoltage decay in a pn junction solar cell is presented which accounts for the pn coupling, i.e. the coupling between the diffused layer and the base of the solar cell. The results have been analysed in some detail which show how the voltage decay is influenced by the various parameters of the diffused layer. It is found that the decay is sensitive to pn coupling in the initial stages, particularly in those solar cells in which a heavy doping of the diffused layer may have caused sufficient band-gap narrowing. A measurement of the voltage decay in the initial stages can therefore yield the parameters of the diffused layer in a solar cell.

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Section: Effect Of S On Pvdsupporting

confidence: 74%

Effect of pn coupling on open-circuit photovoltage decay in a silicon pn junction solar cell

Sharma¹,

Tewary²

1983

J. Phys. D: Appl. Phys.

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“…The discrepancy between this value of t, (indicated by znm) and our value z , = 47 p is explained by observing that z , , is an effective lifetime which does not take into account the finite thickness of the base layer. An approximate relation between z , , and t, can be obtained by keeping only the first term of the series in equation ( 2) and relating the excess carrier lifetime to the slope of the PVD curve (Nosov 1969, Choo and Mazur 1970, Bassett et a1 1973. Using equation (A35), this gives For f = 0, p1 as obtained from equation (A33) is nil2.…”

Section: Zero Drift Fieldmentioning

confidence: 99%

“…The first assumption is valid only if d is much larger than the diffusion length of the minority carriers whereas the second assumption is valid if the impurity concentration is uniform. Neither of these conditions hold in many modern devicessolar cells or diodes (see, for example, Nosov 1969).…”

Section: Introductionmentioning

confidence: 99%

Theory of open-circuit photovoltage decay in a finite base solar cell with drift field

Sharma

Tewary

1982

J. Phys. D: Appl. Phys.

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A theory of open-circuit photovoltage decay has been developed in a pn junction solar cell by using the Sturm-Liouville R-transform technique. The theory accounts for finite thickness of the base, drift field in the base and a finite surface recombination velocity at the back surface. The theory is applied to analyse some experimental results on photovoltage decay in a solar cell induced by monochromatic light. A good fit is obtained between the theoretical and the experimental results which gives an estimate of excess carrier lifetime, diffusion length and drift field in the base as well as the base thickness. It is shown that the excess carrier lifetime, as determined by the slope of the voltage decay curve, will be an effective lifetime which depends upon the sign and the magnitude of the drift field as well as the thickness of the base.

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Effect of polysiliconsilicon interface recombination velocity on current transport properties of poly-Emitter transistors

Srivastava¹

1988

Phys. Stat. Sol. (a)

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Switching in Semiconductor Diodes

Cited by 12 publications

References 39 publications

Effect of pn coupling on open-circuit photovoltage decay in a silicon pn junction solar cell

Effect of pn coupling on open-circuit photovoltage decay in a silicon pn junction solar cell

Theory of open-circuit photovoltage decay in a finite base solar cell with drift field

Effect of polysiliconsilicon interface recombination velocity on current transport properties of poly-Emitter transistors

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