Switching in organic polymer films

Henisch, H.K.; Meyers, Joseph A.; Callarotti, R.C.; Schmidt, Pierre

doi:10.1016/0040-6090(78)90288-2

Cited by 26 publications

(26 citation statements)

References 15 publications

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“…Switching phenomena in organic thin films are known since more than thirty years [3±13] and in some cases are qualitatively quite similar to the switching behaviour observed by Ovshinsky in chalcogenide materials [1,6,9,11]. In most of the cases there are, however, difficulties associated with the reproducibility of the results as well as with the control of critical parameters which are important in memory applications [6,9,11].…”

Section: Introductionmentioning

confidence: 64%

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Negative Charge Carrier Transport in Poly(methylmethacrylate-co-9-anthracenyl-methylmethacrylate) Thin Films

Aguiar

Hümmelgen

2000

phys. stat. sol. (b)

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Section: Introductionmentioning

confidence: 64%

“…In most of the cases there are, however, difficulties associated with the reproducibility of the results as well as with the control of critical parameters which are important in memory applications [6,9,11]. Au/MDCPAC/Al devices by the other hand, present a linear dependence of the off±on switching voltage on MDCPAC film thickness.…”

Section: Introductionmentioning

confidence: 99%

Negative Charge Carrier Transport in Poly(methylmethacrylate-co-9-anthracenyl-methylmethacrylate) Thin Films

Aguiar

Hümmelgen

2000

phys. stat. sol. (b)

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“…Although, several metal-oxides structures exhibited resistive switching properties, the measured switching parameters vary in a wide range, which calls for a more consistent and uniform characterization methodologies. Furthermore, reported switching speeds vary by orders of magnitude [7][8][9][10][11][12][13][14]. The values range from nanoseconds to milliseconds.…”

Section: Introductionmentioning

confidence: 99%

Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor

Rocha

Chen

Gomes

2012

Technological Innovation for Value Creation

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Abstract. Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording currentvoltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit. Keywords:Resistive Random Access Memory (RRAM), Switching, Electrical Bistability, Non-Volatile Memory, Negative Differential Resistance (NDR). IntroductionOrganic memory devices are becoming interesting candidates for electronic applications in information technologies [1]. One emerging candidate is the resistance random access memory (RRAM) based on metal oxides [2,3] and organic semiconductors [4][5][6]. These RRAMs have shown electrically induced resistive switching effects and have been proposed as the basis for future non-volatile memories. They associate the advantages of Flash and DRAM (dynamic random access memories) such as higher packing density, faster switching speed and longer storage life. Although, several metal-oxides structures exhibited resistive switching properties, the measured switching parameters vary in a wide range, which calls for a more consistent and uniform characterization methodologies. Furthermore, reported switching speeds vary by orders of magnitude [7][8][9][10][11][12][13][14]. The values range from nanoseconds to milliseconds. The inconsistencies might be due to different semiconductors, device geometries, or measurement procedures. In order to clarify these discrepancies, we characterize the switching speed of a metal-oxide memory device using dynamic measurements and equivalent circuit modeling.The dynamic characterization of the metal-oxide polymer structure through a double RC circuit provides insight on the switching phenomenon. It is demonstrated the relevance of the oxide layer and its role on limiting the switching speed. Contribution to Value CreationOrganic based memory devices provide a simplified manufacturing process yielding low-cost, flexible, and light-weight area approaching the nano-scale dimensions.

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“…The focus was initially on various polymer films [52][53][54]. In the work by Carchano et al [52], both electrodes were gold (Au) and the organic insulator was glow-discharge-deposited polystyrene.…”

Section: Two-terminal Organic Memory Devicesmentioning

confidence: 99%

Advancements in organic nonvolatile memory devices

Liu

et al. 2011

Chin. Sci. Bull.

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Switching in organic polymer films

Cited by 26 publications

References 15 publications

Negative Charge Carrier Transport in Poly(methylmethacrylate-co-9-anthracenyl-methylmethacrylate) Thin Films

Negative Charge Carrier Transport in Poly(methylmethacrylate-co-9-anthracenyl-methylmethacrylate) Thin Films

Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor

Advancements in organic nonvolatile memory devices

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