1997
DOI: 10.1063/1.364629
|View full text |Cite
|
Sign up to set email alerts
|

Switching field variation in patterned submicron magnetic film elements

Abstract: In this article, a micromagnetic study of magnetic switching properties on submicron scale single layer and multilayer thin film elements is presented. Even at deep submicron scale, there exist various edge domain configurations at the saturation remanent state. It is found that the switching field of these patterned film elements can strongly depend on these edge domain configurations. If the edge domains are not controlled, switching field of a patterned magnetic film element can vary significantly during re… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

2
65
1

Year Published

1999
1999
2022
2022

Publication Types

Select...
5
4

Relationship

0
9

Authors

Journals

citations
Cited by 153 publications
(68 citation statements)
references
References 4 publications
2
65
1
Order By: Relevance
“…Between μ 0 H ≈ 10 and 25 mT, an irreversible switching process causes the magnetization in the central domain to flip, forming configuration (4) and producing a change in the sign and slope of f (H ). The annihilation of the second end vortex between (4) and (5) can then be attributed to the discontinuity at μ 0 H ≈ 100 mT, while the first end vortex annihilates between (5) and (6) producing the feature at μ 0 H ≈ 200 mT.…”
Section: Comparison To Numerical Simulationsmentioning
confidence: 99%
See 1 more Smart Citation
“…Between μ 0 H ≈ 10 and 25 mT, an irreversible switching process causes the magnetization in the central domain to flip, forming configuration (4) and producing a change in the sign and slope of f (H ). The annihilation of the second end vortex between (4) and (5) can then be attributed to the discontinuity at μ 0 H ≈ 100 mT, while the first end vortex annihilates between (5) and (6) producing the feature at μ 0 H ≈ 200 mT.…”
Section: Comparison To Numerical Simulationsmentioning
confidence: 99%
“…The resulting magnetization inhomogeneities tend to affect reversal by acting as nucleation sites for complex switching processes [1][2][3][4][5]. Furthermore, small differences in the initial configurations of edge and surface domains can lead to entirely different reversal modes, complicating the control and reproducibility of magnetic switching from nanomagnet to nanomagnet [6].…”
Section: Introductionmentioning
confidence: 99%
“…Strong theoretical and experimental efforts are being made to explore these new structures, which are often based on soft magnetic materials, such as polycrystalline Co and NiFe. [1][2][3][4][5][6][7] In their study to explain switching field fluctuations of patterned magnetic elements, Zheng and Zhu 7 reported on two remanent magnetization patterns of a Co element, so-called "C" and "S" states, which possess different switching fields and switching behavior. Shi At present, there are no direct measurements of the magnetization distribution of "C" and "S" states, where the direction of the magnetization changes continuously.…”
mentioning
confidence: 99%
“…Due to dipole interactions, the direction of the magnetization changes in the proximity of the boundaries of the structures and forms small edge domains that are sensitive to the shape and the roughness of the structures. 9,10 One possibility to overcome these problems is the use of discs. 9,11 Even more stable magnetization states arise from ferromagnetic rings.…”
Section: Introductionmentioning
confidence: 99%