Switching effect in β-rhombohedral boron

Abstract

Switching effects have been studied in high resistivity undoped β‐rhombohedral boron in the temperature range 77 to 400°K using electrical and electro‐optical measurements. The data collected must be interpreted with different models describing the origin of the switching action, i.e. double injection at low temperatures (about 77 to 250°K) and thermal instability at higher temperatures (250 to 400°K). A description of the main physical events giving rise to switching for double injection in the investigated sample is given. Emission of infrared radiation in the postswitching regime due to hole—electron recombination is also reported.

On permittivity of a stacking nano-faulty film

“…Voltage eff ect on β-B capacity was suggested earlier [34], in connection with an electric current switching phenomenon. It was established that in this material at relatively lowtemperatures (80−250 K) switching is caused by doubleinjection from contacts, whereas at higher temperatures (250−400 K) current instability possesses a thermal nature.…”