Switching effect in poly(p-phenylenevinylene)

Lebedev, E. A.; Forero, S; Brütting, Wolfgang; Schwoerer, M.

doi:10.1016/s0379-6779(99)00363-x

Cited by 9 publications

(5 citation statements)

References 5 publications

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“…Several organic materials, e.g. Rose Bengal [161], 2,3-dichloro-5,6-dicyano-1,4-benzoquinone [184], p-phen ylenevinylene [185], conjugated copolymer containing fluorine and chelated europium complex [186], also exhibit resistive switching natures and are potential candidates for RRAMs. However, many switching organic materials are very often in contact with Al electrodes [161,184,185].…”

Section: Carbon-based Materials and Other Materialsmentioning

confidence: 99%

“…Rose Bengal [161], 2,3-dichloro-5,6-dicyano-1,4-benzoquinone [184], p-phen ylenevinylene [185], conjugated copolymer containing fluorine and chelated europium complex [186], also exhibit resistive switching natures and are potential candidates for RRAMs. However, many switching organic materials are very often in contact with Al electrodes [161,184,185]. In fact, Karthäuser et al have pointed out that switching cells utilizing Al electrodes probably show the resistive switching effect of the interfacial AlO x layers rather than these organic films [161].…”

Section: Carbon-based Materials and Other Materialsmentioning

confidence: 99%

See 1 more Smart Citation

Emerging memories: resistive switching mechanisms and current status

Jeong¹,

Thomas²,

Katiyar³

et al. 2012

Rep. Prog. Phys.

943

648

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The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) binary transition metal oxides (TMOs), e.g. TiO(2), Cr(2)O(3), FeO(x) and NiO; (ii) perovskite-type complex TMOs that are variously functional, paraelectric, ferroelectric, multiferroic and magnetic, e.g. (Ba,Sr)TiO(3), Pb(Zr(x) Ti(1-x))O(3), BiFeO(3) and Pr(x)Ca(1-x)MnO(3); (iii) large band gap high-k dielectrics, e.g. Al(2)O(3) and Gd(2)O(3); (iv) graphene oxides. In the non-oxide category, higher chalcogenides are front runners, e.g. In(2)Se(3) and In(2)Te(3). Hence, the number of materials showing this technologically interesting behaviour for information storage is enormous. Resistive switching in these materials can form the basis for the next generation of NVM, i.e. RRAM, when current semiconductor memory technology reaches its limit in terms of density. RRAMs may be the high-density and low-cost NVMs of the future. A review on this topic is of importance to focus concentration on the most promising materials to accelerate application into the semiconductor industry. This review is a small effort to realize the ambitious goal of RRAMs. Its basic focus is on resistive switching in various materials with particular emphasis on binary TMOs. It also addresses the current understanding of resistive switching behaviour. Moreover, a brief comparison between RRAMs and memristors is included. The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.

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Section: Carbon-based Materials and Other Materialsmentioning

confidence: 99%

Section: Carbon-based Materials and Other Materialsmentioning

confidence: 99%

Emerging memories: resistive switching mechanisms and current status

Jeong¹,

Thomas²,

Katiyar³

et al. 2012

Rep. Prog. Phys.

943

648

View full text Add to dashboard Cite

show abstract

“…Trap recharging, diffusion of mobile ions, formation and dissociation of bipolarons in the accumulation layer should be considered [20]. Considering nature of the negative resistance phenomena observed in present study for some samples it should be mentioned, that negative differential resistance effect was already reported for some organic semiconductor based structures [22][23][24][25][26]. Considering nature of the negative resistance phenomena observed in present study for some samples it should be mentioned, that negative differential resistance effect was already reported for some organic semiconductor based structures [22][23][24][25][26].…”

Section: Comparison Of I-v Characteristics Of Metal/organic Semicondumentioning

confidence: 59%

“…The first one is trapping and de-trapping of carriers [22]. In the case of the bottom-contact organic semiconductor devices not only bulk of the organic semiconductor, but organic semiconductor/ /electrode interface has significant influence on formation of the microconducting filament as well [24]. In such a case at low voltages current flow via spatially localized pathways and as a result increased current strength is observed [22 -26].…”

Section: Comparison Of I-v Characteristics Of Metal/organic Semicondumentioning

confidence: 99%

Current-Voltage Characteristics of the Metal / Organic Semiconductor / Metal Structures: Top and Bottom Contact Configuration Case

Meškinis

Puceta

Šlapikas

et al. 2013

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In present study five synthesized organic semiconductor compounds have been used for fabrication of the planar metal / organic semiconductor / metal structures. Both top electrode and bottom electrode configurations were used. Current-voltage (I-V) characteristics of the samples were investigated. Effect of the hysteresis of the I-V characteristics was observed for all the investigated samples. However, strength of the hysteresis was dependent on the organic semiconductor used. Study of I-V characteristics of the top contact Al/AT-RB-1/Al structures revealed, that in
(0–500) V voltages range average current of the samples measured in air is only slightly higher than current measured in nitrogen ambient. Deposition of the ultra-thin diamond like carbon interlayer resulted in both decrease of the hysteresis of I-V characteristics of top contact Al/AT-RB-1/Al samples. However, decreased current and decreased slope of the I-V characteristics of the samples with diamond like carbon interlayer was observed as well. I-V characteristic hysteresis effect was less pronounced in the case of the bottom contact metal/organic semiconductor/metal samples. I-V characteristics of the bottom contact samples were dependent on electrode metal used.

DOI: http://dx.doi.org/10.5755/j01.ms.19.1.3816

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“…In recent years, the resistive switching (RS) effect has drawn enormous attention from both academic and industrial communities due to its interesting physics as well as promising applications. − It has been demonstrated that a wide variety of materials, such as metal oxides, − chalcogenides, and organic materials, show RS behavior. So far the mechanisms of RS, which are related to some important scientific issues and also significant for applications of RS, have not been solved .…”

Section: Introductionmentioning

confidence: 99%

Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States

Zhao

Qiao

Luo

et al. 2017

ACS Appl. Mater. Interfaces

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The resistive switching (RS) effect in various materials has attracted much attention due to its interesting physics and potential for applications. NiO is an important system and its RS effect has been generally explained by the formation/rupture of Ni-related conducting filaments. These filaments are unique since they are formed by an electroforming process, so it is interesting to explore their magnetoresistance (MR) behavior, which can also shed light on unsolved issues such as the nature of the filaments and their evolution in the RS process, and this behavior is also important for multifunctional devices. Here, we focus on MR behavior in NiO RS films with different resistance states. Rich and interesting MR behaviors have been observed, including the normal and anomalous anisotropic magnetoresistance and tunneling magnetoresistance, which provide new insights into the nature of the filaments and their evolution in the RS process. First-principles calculation reveals the essential role of oxygen migration into the filaments during the RESET process and can account for the experimental results. Our work provides a new avenue for exploration of the conducting filaments in resistive switching materials and is significant for understanding the mechanism of RS effect and multifunctional devices.

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Switching effect in poly(p-phenylenevinylene)

Cited by 9 publications

References 5 publications

Emerging memories: resistive switching mechanisms and current status

Emerging memories: resistive switching mechanisms and current status

Current-Voltage Characteristics of the Metal / Organic Semiconductor / Metal Structures: Top and Bottom Contact Configuration Case

Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States

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