Switching effect and the metal–insulator transition in electric field

Pergament, A. L.; Борисков, П. П.; Velichko, Andrei; Kuldin, N. A.

doi:10.1016/j.jpcs.2010.03.032

Cited by 58 publications

(90 citation statements)

References 27 publications

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“…Electrical forming results in the changes in oxygen stoichiometry conditioned by the ionic processes in electric fields close to the MOM structure breakdown field. This picture is quite similar to what is observed in many other TMOs exhibiting the insulator-to-metal transitions [15,22,27,[33][34][35]. The results obtained concerning the threshold switching in thin-film MOM structures with molybdenum oxides indicate the possibility of application of this material in oxide electronics as micro-and nanostructured switching elements and other electronic devices.…”

Section: Resultssupporting

confidence: 85%

“…In this case, the switching mechanism might be described in terms of the "critical temperature" model [35]. Due to the effect of Joule heating, when the voltage reaches a critical value V = th , the channel is heated up to T = and the structure undergoes a transition from the insulating OFF state to the metallic ON state.…”

Section: Resultsmentioning

confidence: 99%

“…Note that the value of in (2) does not coincide exactly with equilibrium transition temperature for the MIT in a particular material: for example, for vanadium dioxide this in (2) may vary in the range 310-330 K, whereas the temperature of the MIT, in the absence of electric field, is equal to 340 K in this compound [1,22,27,31,35].…”

Section: Resultsmentioning

confidence: 99%

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Electrical Switching in Thin Film Structures Based on Molybdenum Oxides

Pergament

Malinenko

Алешина

et al. 2014

Journal of Experimental Physics

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We report on the experimental study of electrical instabilities in thin film structures on the basis of molybdenum oxides. Thin films of molybdenum oxide are obtained by thermal vacuum evaporation and anodic oxidation. The results of X-ray structural analysis, investigation of optical and electrical properties, are presented. It is shown that the initial vacuum-deposited oxide represents amorphous MoO 3 . In the MOM (metal-oxide-metal) structures with Mo oxide films obtained by the two methods, the effect of electrical switching with an S-shaped current-voltage characteristic is found. We put forward a hypothesis according to which the switching mechanism is associated with the development of electrical instability caused by the insulator-to-metal transition in Mo 8 O 23 . The switching channel, comprising this lower valence oxide, emerges in the initial film during the process of electrical forming of the MOM structure. The obtained results indicate the possibility of application of these structures in oxide micro-and nanoelectronics as electronic switches and other electronic devices.

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Section: Resultssupporting

confidence: 85%

Section: Resultsmentioning

confidence: 99%

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Electrical Switching in Thin Film Structures Based on Molybdenum Oxides

Pergament

Malinenko

Алешина

et al. 2014

Journal of Experimental Physics

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“…Pergament et al 25 proposed a threshold switching mechanism for VO 2 based on electronically induced Mott-Hubbard metal-insulator transition, occurring in the conditions of non-equilibrium carrier density in the presence of an applied electric-field. Several of these processes could have low activation energies and provide an acceptable origin of the threshold switching in binary oxides.…”

mentioning

confidence: 99%

Transient phases during fast crystallization of organic thin films from solution

Wan

Ulbrandt

et al. 2016

APL Materials

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We report an in-situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1]benzothieno [3,2b][1]benzothiophene (C 8 -BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to ≈93 • C. The layered smectic liquid-crystalline phase of C 8 -BTBT initially forms and preceedes inter-layer ordering, followed by a transient crystalline phase for temperature >60 • C, and ultimately the stable phase. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility during high-speed processing. For high writing speed (25 mm/s) mobility up to 3.0 cm 2 /V-s has been observed.

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“…Experimental facts in question indicate that the transition might be initiated by an increase in the free charge carrier density (without heating and without affecting the lattice, i.e. not under, for example, doping or pressure) under photo-generation [63], [64], injection [44], or high-field generation at switching [68].…”

Section: B Properties Of Vomentioning

confidence: 99%

Oxide Electronics and Vanadium Dioxide Perspective: A Review

Pergament¹,

Стефанович²,

Velichko³

2013

Journal on Selected Topics in Nano Electronics and Computing

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-Metal-oxide-semiconductor field-effect transistors (MOSFET) have been for a long time the key elements of modern electronics industry. For the purpose of a permanent integration enhancement, the size of MOSFET has been decreasing exponentially for over decades in compliance with Moore's Law, but nowadays, owing to the intrinsic restrictions, the further scaling of MOSFET devices either encounters fundamental limits or demands for more and more sophisticated and expensive engineering solutions. Alternative approaches and device concepts are currently designed both in order to sustain an increase of the integration degree, and to improve the functionality and performance of electronic devices. Oxide electronics is one of such promising approaches which could enable and accelerate the development of information and computing technology. The behavior of delectrons in transition metal oxides is responsible for the unique properties of these materials, causing strong electronelectron correlations, which play an important role in the mechanism of metal-insulator transition. The Mott transition in vanadium dioxide is specifically the phenomenon that researchers consider as a corner stone of oxide electronics, particularly, in its special direction known as a Motttransition field-effect transistor (MTFET). This review focuses on current research, latest results, urgent problems and nearterm outlook of oxide electronics with special emphasis on the state of the art and recent progress in the field of VO 2 -based MTFETs.

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Switching effect and the metal–insulator transition in electric field

Cited by 58 publications

References 27 publications

Electrical Switching in Thin Film Structures Based on Molybdenum Oxides

Electrical Switching in Thin Film Structures Based on Molybdenum Oxides

Transient phases during fast crystallization of organic thin films from solution

Oxide Electronics and Vanadium Dioxide Perspective: A Review

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