2012
DOI: 10.1109/led.2012.2188775
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Switching Characteristics of $\hbox{Ru/HfO}_{2} \hbox{/TiO}_{2-x}\hbox{/Ru}$ RRAM Devices for Digital and Analog Nonvolatile Memory Applications

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Cited by 60 publications
(37 citation statements)
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“…6. However, it is well-known that the charging of parasitic capacitor at transistor-RRAM junction when RRAM switches from HRS to LRS leads to an overshoot of current over the compliance current [6] [15], shown in Fig. 6.…”
Section: Rram Power Analysismentioning
confidence: 99%
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“…6. However, it is well-known that the charging of parasitic capacitor at transistor-RRAM junction when RRAM switches from HRS to LRS leads to an overshoot of current over the compliance current [6] [15], shown in Fig. 6.…”
Section: Rram Power Analysismentioning
confidence: 99%
“…Each word in the input program translates into a (2+N)-bit word in the output program (extra 2 bits as the flip indicator) 2 . Overview of the proposed content-aware information encoding scheme.Algorithm 1: Content-aware encoding algorithm 1 Inputs: N: word size, P: program binary 2 Output: EP: encoded program binary Initialize EP as a binary stream 5 Array W = slice P into size(P )/N N-bit words6 for each word in W…”
mentioning
confidence: 99%
“…If electrons and holes move to the surface of the semiconductor catalyst, before recombination, they can react with toxic molecules and decompose them to non-toxic compounds. Details of photocatalytic reactions can be found elsewhere [7][8][9][10] .…”
Section: Introductionmentioning
confidence: 99%
“…In addition, an artificial synapse, similar to a biological synapse, needs t o be a highly scalable and ultra-low energy consuming analog or multi-state reconfigurable non-volatile memory element, which has been difficult to achieve using traditional VLSI circuit components [1]. To address this issue, recent research efforts have focused on developing twoterminal non-volatile memory devices (also known as memristive devices) [4][5][6]. However, much work is needed to understand the fundamental characteristics of these devices, identify appropriate materials and suitable device configurations to meet the target specifications, develop device models, and evaluate the performance in large -scale neural circuits.…”
Section: Introductionmentioning
confidence: 99%