Switching cell design optimization of SiC-based power modules for current source inverter applications

Rodrigues, Luis Gabriel Alves; Lefèvre, Guillaume; Martin, J.A.; Ferrieux, Jean-Paul

doi:10.23919/epe17ecceeurope.2017.8099105

Cited by 11 publications

(2 citation statements)

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“…1b) must be able to conduct unidirectional current and block bidirectional voltage. A switch with such properties can be obtained through various configurations of semiconductor power devices [1][2][3][4][5][6][7][8][9][10][11][12][13], including reverse blocking IGBTs, but when high frequency operation is discussed SiC MOSFETs and Schottky diodes are the obvious choice. Therefore, a basic version of the switch contains series connection of these elements but two MOSFETs in common source configuration may also be considered.…”

Section: Reduction Of the Current Stress With H7 Bridgementioning

confidence: 99%

“…Current source inverter (CSI) topologies are very convenient when low voltage sources are connected with three-phase loads or a supply grid and several examples may be found in the literature [1][2][3][4][5]. Recent introduction of Silicon Carbide (SiC) technology has signif icant impact on CSI performance as passive components may be reduced with the increase of the switching f requency [6][7][8][9][10][11][12][13]. Unfortunately, when bidirectional power f low is required as in grid/battery systems (energy storage) standard CSI structures are problematic as three-phase bridge enables unidirectional current only.…”

Section: Introductionmentioning

confidence: 99%

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Bulletin of the Polish Academy of Sciences: Technical Sciences

Trochimiuk¹,

Zdanowski²,

Rąbkowski³

2019

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This paper discusses selected problems regarding a high-frequency improved current-fed quasi-Z-source inverter (iCFqZSI) designed and built with SiC power devices. At first, new, modified topology of the impedance network is presented. As the structure is derived from the series connection of two networks, the voltage stress across the SiC diodes and the inductors is reduced by a factor of two. Therefore, the SiC MOSFETs may be switched with frequencies above 100 kHz and volume and weight of the passive components is decreased. Furthermore, additional leg with two SiC MOSFETs working as a bidirectional switch is added to limit the current stress during the short-through states. In order to verify the performance of the proposed solution a 6 kVA laboratory model was designed to connect a 400 V DC source (battery) and a 3£400 V grid. According to presented simulations and experimental results high-frequency iCFqZSI is bidirectional -it may act as an inverter, but also as a rectifier. Performed measurements show correct operation at switching frequency of 100 kHz, high quality of the input and output waveforms is observed. The additional leg increases efficiency by up to 0.6% -peak value is 97.8%.

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