Switching and memory effects in partly crystallized amorphous Ge2Sb2Te5 films in a current controlled mode

Almasov, N.; Bogoslovskiy, N. A.; Korobova, N.; Kozyukhin, S. A.; Fefelov, S. A.; Kazakova, L. P.; Jakovlev, Sergey; Tséndin, K. D.; Гусейнов, Н. Р.

doi:10.1016/j.jnoncrysol.2012.09.008

Cited by 19 publications

(8 citation statements)

References 24 publications

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“…Consequently, the voltage measured in CH2 changes as well as the voltage drop on the sample ( V CH1 -V CH2 ). That is, there is an uncertainty in voltage determination across the sample, inherent to the measuring method (Almasov et al , 2012; Fefelov et al , 2014).…”

Section: Methodsmentioning

confidence: 99%

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Current-voltage curves of eutectic In-Sb-Te thin films for phase change memory devices

Bilovol

Barbon

Arcondo

2019

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Purpose The purpose of this paper is to investigate electrical properties of eutectic In8Sb8Te84 and In10Sb51Te39 as made thin films to evaluate their potential for non-volatile phase-change memories, once the thermal measurements are very optimistic. Design/methodology/approach The films were deposited by pulse laser deposition technique. By using a very simple home-made cell, transversal current-voltage curves films were measured involving both voltage controlled-pulses generator and current controlled-pulses generator, employing different pulse shapes: triangular and sine shaped. Findings The memory effect, characteristic of a typical phase-change memory material, was observed in both materials under research. For higher tellurium content in the film, lower is the value of threshold voltage. Research limitations/implications Further studies on endurance, scaling and SET/RESET operations are needed. Practical implications The values of the key parameters, threshold voltage and hold voltage are comparable with those of Ge2Sb2Te5, GeTe and Sb2Te being considered to date as the main compounds for PCM devices. Originality/value The conduction mechanism in the amorphous regime is agreed with Poole–Frenkel effect in deep traps.

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Section: Methodsmentioning

confidence: 99%

“…Alternatively, a circuit with a current generator was employed as it was proposed by Almasov et al (2012), Fefelov et al (2014). In this case, given I , VCH2 is determined independently of the voltage drop on the PCM, that is, V CH1 -V CH2 .…”

Section: Methodsmentioning

confidence: 99%

Current-voltage curves of eutectic In-Sb-Te thin films for phase change memory devices

Bilovol

Barbon

Arcondo

2019

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“…8(a) talline to the amorphous state by a melt-quenching process. 20) The heating electrode plays a key role in the phase transition by providing resistive joule heat to the chalcogenide alloy, which promotes the temperature rise of GeSbTe to its melting point. The amount of the joule heat (proportional to I 2 R = V 2 /R) increases with decreasing R h at a fixed voltage.…”

Section: Switch Operationmentioning

confidence: 99%

Fabrication of SiGeSb heating electrodes and their application for four-terminal chalcogenide programmable switches

Park

Lee

2015

Jpn. J. Appl. Phys.

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This paper reports on sputter-deposited SiGeSb thin films and their application for four-terminal chalcogenide switch devices. The microstructures and electrical properties of the SiGeSb films were highly dependent on antimony concentration and annealing temperature. Microstructural changes such as surface roughening and formation of antimony grains were observed only for the Sb-rich SiGeSb films after annealing at 400°C and higher. The sheet resistance of the SiGeSb films containing a small amount of antimony changed sporadically with annealing temperature because of a trade-off between activation and surface depletion of antimony. The resistance of the SiGeSb heating electrodes was varied by changing sputtering power for the antimony target and by changing the annealing temperature. Four-terminal chalcogenide switch devices were fabricated with SiGeSb heating electrodes of varying resistance. It was found that the switching voltage of the fabricated switch device was proportional to the resistance of the SiGeSb heating electrode. This indicates that the SiGeSb films with tunable sheet resistance are of great importance in fabricating chalcogenide switch devices and the optimization of the resistance of the SiGeSb film is essential to ensure proper switch operation.

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“…В нашей работе [8] впервые была предложена методика измерения нелинейности и эффекта переключения в режиме заданного тока. В такой методике ток через образец не изменяется во время переключения, что позволяет разделить влияние электрического тока и напряжения.…”

Section: Introductionunclassified

Оценка температуры шнура тока, возникающего при переключении в халькогенидах системы GeSbTe

Аркадьевич¹,

Павловна²,

Александрович³

et al. 2018

Физика И Техника Полупроводников

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Вольт-амперные характеристики тонкопленочных образцов системы GeSbTe измерены в режиме генератора тока. Исследованы осцилляции напряжения, наблюдающиеся после переключения. Показано, что эти осцилляции могут быть связаны с образованием горячего шнура тока и его постепенным остыванием. Сделаны оценки размера и температуры шнура тока. Показано, что характерная температура в шнуре тока соответствует температуре фазового перехода в кристаллическое состояние.

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Switching and memory effects in partly crystallized amorphous Ge2Sb2Te5 films in a current controlled mode

Cited by 19 publications

References 24 publications

Current-voltage curves of eutectic In-Sb-Te thin films for phase change memory devices

Current-voltage curves of eutectic In-Sb-Te thin films for phase change memory devices

Fabrication of SiGeSb heating electrodes and their application for four-terminal chalcogenide programmable switches

Оценка температуры шнура тока, возникающего при переключении в халькогенидах системы GeSbTe

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