Switching and memory characteristics of thin films of an ambipolar organic compound: effects of device processing and electrode materials

Lee, Myung-Won; Pearson, Christopher; Moon, Tae Jung; Fisher, Anita M.; Petty, Michael C.

doi:10.1088/0022-3727/47/48/485103

Cited by 7 publications

(1 citation statement)

References 32 publications

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“…Nevertheless, when the bias changes to positive, an abrupt current increase is found again, and the current does not reset to the low level in the subsequent voltage cycles. The above measurement results demonstrate WORM behavior of the Ag/TiO x N y /Ti/n + -Si resistive memory, and indicate that the RS process is attributed to the injection of Ag cations from the Ag electrode [13,14]. If the resistance switching is induced by the bulk oxygen vacancies, the set process should be observed in both voltage polarities [15].…”

Section: Resultsmentioning

confidence: 56%

High on–off current ratio titanium oxynitride write-once-read-many-times memory

Hsu¹,

Jhang²,

Chien³

et al. 2021

Semicond. Sci. Technol.

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In this letter, we demonstrate a titanium oxynitride (TiO x N y ) write-once-read-many-times memory with a high ON/OFF current ratio of 109. The endurance and read-disturb tests both reveal high stability and data nonvolatility of the TiO x N y resistive memory. A Ti metal layer was transformed into TiO x N y using an annealing process in a nitrogen ambient. The XPS analysis shows that the TiO x N y resistive switching (RS) layer possesses few Ti interstitial defects and oxygen deficiencies. A voltage-polarity dependent set process is observed in the Ag/TiO x N y /Ti/n+-Si resistive memory. The residual Ti metal layer provides a good contact with the TiO x N y RS layer, and the electrons can transport from the Ti to the Ag electrode via tunneling processes. In the low voltage region, the conduction current is dominated by the direct tunneling mechanism. When the voltage is beyond a transition voltage of 1.25 V, the carrier transport mechanism changes to Fowler–Nordheim tunneling. The conduction mechanisms are consistent with the finding obtained by the energy band diagram analysis.

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Section: Resultsmentioning

confidence: 56%

High on–off current ratio titanium oxynitride write-once-read-many-times memory

Hsu¹,

Jhang²,

Chien³

et al. 2021

Semicond. Sci. Technol.

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Controllable Organic Resistive Switching Achieved by One‐Step Integration of Cone‐Shaped Contact

et al. 2017

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Conductive filaments (CFs)-based resistive random access memory possesses the ability of scaling down to sub-nanoscale with high-density integration architecture, making it the most promising nanoelectronic technology for reclaiming Moore's law. Compared with the extensive study in inorganic switching medium, the scientific challenge now is to understand the growth kinetics of nanoscale CFs in organic polymers, aiming to achieve controllable switching characteristics toward flexible and reliable nonvolatile organic memory. Here, this paper systematically investigates the resistive switching (RS) behaviors based on a widely adopted vertical architecture of Al/organic/indium-tin-oxide (ITO), with poly(9-vinylcarbazole) as the case study. A nanoscale Al filament with a dynamic-gap zone (DGZ) is directly observed using in situ scanning transmission electron microscopy (STEM) , which demonstrates that the RS behaviors are related to the random formation of spliced filaments consisting of Al and oxygen vacancy dual conductive channels growing through carbazole groups. The randomicity of the filament formation can be depressed by introducing a cone-shaped contact via a one-step integration method. The conical electrode can effectively shorten the DGZ and enhance the localized electric field, thus reducing the switching voltage and improving the RS uniformity. This study provides a deeper insight of the multiple filamentary mechanisms for organic RS effect.

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Light‐Tunable Nonvolatile Memory Characteristics in Photochromic RRAM

Ling

Tan

Fang

et al. 2017

Adv Elect Materials

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Light‐tunable resistive switching (RS) characteristics are demonstrated in a photochromophore (BMThCE)‐based resistive random access memory. Triggered by nondestructive ultraviolet or visible light irradiation, two memory‐type RS characteristics can be reversibly modulated in the same device upon a narrow range of applied voltage (<6 V), accompanied by the photochromophores in the active layer reversibly changed between ring‐open state (namely, o‐BMThCE) and ring‐closed state (namely, c‐BMThCE). The o‐BMThCE‐based memory exhibits a write‐once‐read‐many characteristic with a high current on/off ratio of 105, while the c‐BMThCE‐based one shows a flash characteristic. Both of the RS characteristics present good nonvolatile stability with the resistance states maintained over 104 s without variation. This RS modulation is possibly related to the formation and rupture of conductive filaments, which formed along channels consisting of BMThCE trapping molecules. This work provides a new memory element for the design of light‐controllable high density storage and data encryption technology.

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Switching and memory characteristics of thin films of an ambipolar organic compound: effects of device processing and electrode materials

Cited by 7 publications

References 32 publications

High on–off current ratio titanium oxynitride write-once-read-many-times memory

High on–off current ratio titanium oxynitride write-once-read-many-times memory

Controllable Organic Resistive Switching Achieved by One‐Step Integration of Cone‐Shaped Contact

Light‐Tunable Nonvolatile Memory Characteristics in Photochromic RRAM

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