Switched Polarity Charge Pump for NOR-type Flash Memories

Mohammad, Mohammad Gh.; Fahmi, Jalal; Al-Terkawi, Omar

doi:10.1109/icecs.2006.379676

Cited by 3 publications

(3 citation statements)

References 8 publications

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“…By a substitute of the p-stage, we avoid of using a diode connected transistor [I], [5], [8], which causes voltage loss. The configuration is similar to [11]. When 'switch' signal is low ( good linearity but the voltage loss is significant.…”

Section: _ C S B+ C D B B Vmentioning

confidence: 92%

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A 1.5V four phase switched polarity charge pump

Huang

Okamura

Wang

et al. 2009

2009 International Conference on Communications, Circuits and Systems

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A four phase switched polarity charge pump using O.13JLm triple well CMOS technology is presented. The architecture takes advantage of the threshold voltage cancellation scheme in the conventional four phase Dickson charge pump. With the body control technique, the body effect is eliminated. The charge transfer unit is shared in positive and negative operation, which makes the design more compact. Simulation results show that the proposed 5-stage charge pump can reach +8.22V/-8.05V (ideal: +9V/-9V) with 10% of total capacitance as estimated parastics, and the output indicates good linearity with respect to the increase of stages.

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Section: _ C S B+ C D B B Vmentioning

confidence: 92%

“…Fig.I-d shows one stage of a previously published switch polarity charge pump [11]. The connection of the body, drain and gate result in a simple body-source junction diode, of which the threshold is much lower than a normal NMOS transistor, besides the threshold is not rising with stages and there is no overstress.…”

Section: Conventional Charge Pumpsmentioning

confidence: 98%