Switchable domains in point contacts based on transition metal tellurides

Layered van der Waals Topological Metals of TaTMTe4 (TM = Ir, Rh, Ru) Family

“…32 This material also demonstrates nonsaturating MR. 33 Recently, both binary (WTe 2 , MoTe 2 ) and ternary (TaTMTe 4 , TM = Ir, Rh, Ru) tellurides showed bistable resistive metal−insulator switching in point contact measurements at room temperature, bringing those materials closer to applications. 14 Original reports of the TaIrTe 4 structure also assert the existence of several other MM*Te 4 compounds and authors furthermore show that among other compounds TaRhTe isostructural to TaIrTe 4 , while TaRuTe 4 might be the disordered analogue of the TaIrTe 4 . 23,24 This wide array of isostructured or similarly structured compounds makes this family a large playground to study the dependence of physical properties on parameters such as lattice size, interatomic distances, outer shell electron number, etc.…”

“…This material also demonstrates nonsaturating MR . Recently, both binary (WTe 2 , MoTe 2 ) and ternary (TaTMTe 4 , TM = Ir, Rh, Ru) tellurides showed bistable resistive metal–insulator switching in point contact measurements at room temperature, bringing those materials closer to applications …”

“…12 Moreover, MoTe 2 and WTe 2 exhibit reversible metal−insulator transition, making them attractive candidates for two-dimensional nanoelectronics. 13,14 WTe 2 shows similar array of properties: the compound is known to host quantum spin Hall state in the bulk 15−17 as well as in monolayer 18 and has large nonsaturating magnetoresistance (MR). 19,20 Another feature of this structure is the possibility of formation of polar domains.…”

“…T c is enhanced strongly in point-contact measurements, with sulfur substitution, and in monolayers . Moreover, MoTe 2 and WTe 2 exhibit reversible metal–insulator transition, making them attractive candidates for two-dimensional nanoelectronics. , WTe 2 shows similar array of properties: the compound is known to host quantum spin Hall state in the bulk − as well as in monolayer and has large nonsaturating magnetoresistance (MR). , Another feature of this structure is the possibility of formation of polar domains. As reported in refs and , both WTe 2 and MoTe 2 demonstrate switchable spontaneous polarization and a natural ferroelectric domain structure; in the case of WTe 2 , the effect is present even at the room temperature.…”