“…Under the existing processing technology, switching and tunable broadband terahertz absorption based on graphene and vanadium dioxide has been fabricated using deposition, chemical vapor deposition, wet transfer technology, gas equivalent ionization etching technology, and magnetron sputtering deposition technology [54]. Switching and tunable wideband terahertz absorption based on graphene and vanadium dioxide has been achieved using thermal evaporation systems, spin coating and ground curing processes, magnetron sputtering, and wet transfer techniques [55].…”
A multifunctional switchable metamaterial device based on graphene, a gold layer, polyimide, vanadiµm dioxide (VO2), and the sapphire substrate is designed in this paper. The top layer consists of a gold wire, graphene, and two split-ring resonators with the same parameters. By adjusting the Fermi level of graphene, the regulation of BIC and quasi-BIC is realized, and the conversion between BIC and absorber is realized by adjusting the conductivity of VO2. When the device is converted into a wave-absorbing device with single-band absorption characteristics, the Fermi level of graphene at this time is 0.001 eV, the absorption peak at 0.820 THz is higher than 99.5%, and when the Fermi level of regulated graphene is 1 eV, the absorption peak at 0.667 THz is also higher than 99.5%. The peak frequency of the device is 0.640 THz when it converts to quasi-BIC. To the best of our knowledge, this is the first time that the conversion and regulation of BIC and absorber have been achieved using these two phase change materials. Moreover, by adjusting the parameters of the metamaterial structure, the working efficiency and frequency of BIC and absorber can be dynamically adjusted. The electric field distribution and surface current of metamaterials are further studied, and the physical mechanism of effective absorption and BIC is discussed. These results show that the metamaterials proposed in this paper have many advantages, such as terahertz absorption, BIC, and active device control, and are of great significance for developing terahertz multifunctional devices.
“…Under the existing processing technology, switching and tunable broadband terahertz absorption based on graphene and vanadium dioxide has been fabricated using deposition, chemical vapor deposition, wet transfer technology, gas equivalent ionization etching technology, and magnetron sputtering deposition technology [54]. Switching and tunable wideband terahertz absorption based on graphene and vanadium dioxide has been achieved using thermal evaporation systems, spin coating and ground curing processes, magnetron sputtering, and wet transfer techniques [55].…”
A multifunctional switchable metamaterial device based on graphene, a gold layer, polyimide, vanadiµm dioxide (VO2), and the sapphire substrate is designed in this paper. The top layer consists of a gold wire, graphene, and two split-ring resonators with the same parameters. By adjusting the Fermi level of graphene, the regulation of BIC and quasi-BIC is realized, and the conversion between BIC and absorber is realized by adjusting the conductivity of VO2. When the device is converted into a wave-absorbing device with single-band absorption characteristics, the Fermi level of graphene at this time is 0.001 eV, the absorption peak at 0.820 THz is higher than 99.5%, and when the Fermi level of regulated graphene is 1 eV, the absorption peak at 0.667 THz is also higher than 99.5%. The peak frequency of the device is 0.640 THz when it converts to quasi-BIC. To the best of our knowledge, this is the first time that the conversion and regulation of BIC and absorber have been achieved using these two phase change materials. Moreover, by adjusting the parameters of the metamaterial structure, the working efficiency and frequency of BIC and absorber can be dynamically adjusted. The electric field distribution and surface current of metamaterials are further studied, and the physical mechanism of effective absorption and BIC is discussed. These results show that the metamaterials proposed in this paper have many advantages, such as terahertz absorption, BIC, and active device control, and are of great significance for developing terahertz multifunctional devices.
“…VO 2 is a temperature sensitive material that transits from an insulator to metal at a critical temperature around 340 K. The variations of the VO 2 conductivity as a function of the temperature at both of the temperature rising and falling cycles are extracted from Ref. 51 and plotted in Fig. 2 .…”
Section: Structural Designmentioning
confidence: 99%
“… Figure 2 The conductivity of VO 2 as function of temperature extracted from data presented in Ref. 51 . Figure 3 The complex permittivity of VO 2 as function of frequency for two stable phases as dielectric phase ( σ VO2 = 200 S/m) and metallic phase ( σ VO2 = 200,000 S/m).…”
This article presents the design of a 2-bit dual-band switchable terahertz absorber using a stacked combination of graphene and vanadium dioxide (VO2) metamaterials. For the first time, the proposed absorber design offers four switchable states by controlling the conductivity of graphene and VO2 metamaterial layers. The lower absorption band is produced by the graphene metamaterial, whereas the upper band is implemented by the VO2 metamaterial pattern. The structure shows two absorption bands (State 11) at 0.745–0.775 THz and 2.3–5.63 THz, when the Fermi graphene level of graphene is 0.2 eV and the VO2 is in the metallic phase. The lower absorption band is turned off, while keeping the upper band (State 01), when the graphene Fermi level is 0 eV and the VO2 layer is in the metallic phase. The upper absorption band is turned off, while preserving the lower absorption band (State 10) by switching the VO2 into the insulator phase and keeping the graphene Fermi level at 0.2 eV. Finally, both of the absorption bands are turned off by setting the graphene Fermi level to 0 eV and switching the VO2 into the insulating phase. Equivalent circuit modelling analysis and full-wave electromagnetic simulations are used to explain the operation principle of the proposed absorber. Very good agreement is obtained between the theoretical analysis and the simulations confirming the presented design principle for the 2-bit switchable absorber.
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