Swirl defects in float-zoned silicon crystals

On the role of thermal gradient related stress in intrinsic defect formation during single crystal silicon growth from the melt

“…The influence of pulling speed on G0 and C0 crit Neimark et al [27] demonstrated already in 1970 that the axial thermal gradient near the melt solid interface at the center of the crystal decreases with increasing pulling rate. Kuiken and Roksnoer [28] showed both experimentally and theoretically that the axial thermal gradient in the center of the crystal decreases with increasing pulling rate and increases with increasing crystal length, a result that was also confirmed experimentally by Abe both for FZ [17] with respect to the effect of the pulling rate and for Cz crystals [18,20]. As it was shown in the previous paragraphs that stress effects are important and should be taken into account, it is clear that also the effect of pulling speed changes on the thermal gradient should be considered.…”

“…An alternative explanation was already suggested by Abe some 30 years ago and further substantiated afterwards [17][18][19][20]. His observations suggest that compressive stress induced by thermal gradients increases the self-interstitial equilibrium concentration and lowers that of vacancies.…”

Generation and annihilation of point defects by doping impurities during FZ silicon crystal growth

“…The first manuscript [1] describes how the thermal gradient near the growth interface of growing crystals is a decreasing function of the growth rate [2,3], which is a conclusion opposite to that traditionally reported in papers [4][5][6][7][8][9]. The experimental results reported in the manuscript also show that the area near the growth interface is filled with vacancies in both the FZ and the CZ crystals and that, if the thermal gradient near the growth interface is small, the vacancies at the growth interface in the crystal remain proportional to the equilibrium concentration, and the vacancy produces secondary defects, such as D defects in FZ crystals and tetrahedral voids in CZ crystals.…”

Intrinsic point defect behavior in silicon crystals during growth from the melt: A model derived from experimental results

“…In the first half of this paper, we relate how the measurement of temperature distributions in a growing silicon crystal demonstrates that the thermal gradient near the growth interface is a decreasing function of the growth rate [8,9]. In the second half, the behavior of point defects is explained in detail by our ''birth and death model'' of point defects based on the following two conditions:…”