Suspended InAs Nanowire-Based Devices for Thermal Conductivity Measurement Using the 3ω Method

Rocci, Mirko; Demontis, Valeria; Prete, Domenic; Ercolani, Daniele; Sorba, L.; Beltram, Fabio; Pennelli, Giovanni; Roddaro, Stefano; Rossella, Francesco

doi:10.1007/s11665-018-3715-x

Cited by 20 publications

(20 citation statements)

References 44 publications

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“…However, we tentatively speculate a non-trivial role of the O 2 plasma processing step, which is necessary to remove the sacrificial layer during the fabrication of the suspended nanowire devices. In fact, while previous results of our group allow to rule out any direct impact of the O 2 plasma treatment on the electrical transport properties of the nanowire [57], in the present experiment, we are not allowed to absolutely exclude that the oxygen plasma could impact detrimentally on the interaction between the nanowire surface and the sensed H 2 O molecules, making the suspended nanowire device less sensitive to relative humidity variations. As a matter of fact, several studies report evidence for O 2 plasma-induced modification of an oxide surface [59,60].…”

Section: Discussionmentioning

confidence: 80%

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Conductometric Sensing with Individual InAs Nanowires

Demontis

Rocci

Donarelli

et al. 2019

Sensors

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In this work, we isolate individual wurtzite InAs nanowires and fabricate electrical contacts at both ends, exploiting the single nanostructures as building blocks to realize two different architectures of conductometric sensors: (a) the nanowire is drop-casted onto—supported by—a SiO2/Si substrate, and (b) the nanowire is suspended at approximately 250 nm from the substrate. We test the source-drain current upon changes in the concentration of humidity, ethanol, and NO2, using synthetic air as a gas carrier, moving a step forward towards mimicking operational environmental conditions. The supported architecture shows higher response in the mid humidity range (50% relative humidity), with shorter response and recovery times and lower detection limit with respect to the suspended nanowire. These experimental pieces of evidence indicate a minor role of the InAs/SiO2 contact area; hence, there is no need for suspended nanostructures to improve the sensing performance. Moreover, the sensing capability of single InAs nanowires for detection of NO2 and ethanol in the ambient atmosphere is reported and discussed.

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Section: Discussionmentioning

confidence: 80%

“…The fabrication protocols of the two device geometries are schematically depicted in Figure 1a (supported NW device) and in Figure 1b (suspended NW device). More detailed information about the fabrication protocol of suspended devices can be found in [57].…”

Section: Methodsmentioning

confidence: 99%

Conductometric Sensing with Individual InAs Nanowires

Demontis

Rocci

Donarelli

et al. 2019

Sensors

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“…The present scheme is designed to allow field‐effect conductance modulation together with thermal‐conductivity measurements via the 3ω technique. [ 41 ] Figure reports the device architecture for InAs nanowires (scanning electron micrographs in panels (a,b) in Figure 1 and schematic view in panel (c) in Figure 1) together with some details on the device equivalent circuit (panel (d) in Figure 1). The nanowire is thermally anchored at its ends via two metallic contacts (square contacts labeled “I injection” in panel (a) in Figure 1) designed to act simultaneously as ohmic contacts and heat sinks, ensuring a fixed temperature at the nanowire extremities thanks to the very large area of the contact (typically exceeding 10 × 10 μm 2 ) together with the high gold thermal conductivity.…”

Section: Resultsmentioning

confidence: 99%

Electrostatic Control of the Thermoelectric Figure of Merit in Ion‐Gated Nanotransistors

Prete

Dimaggio

Demontis

et al. 2021

Adv Funct Materials

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Semiconductor nanostructures have raised much hope for the implementation of high‐performance thermoelectric generators. Indeed, they are expected to make available reduced thermal conductivity without a heavy trade‐off on electrical conductivity, a key requirement to optimize the thermoelectric figure of merit. Here, a novel nanodevice architecture is presented in which ionic liquids are employed as thermally‐insulating gate dielectrics. These devices allow the field‐effect control of electrical transport in suspended semiconducting nanowires in which thermal conductivity can be simultaneously measured using an all‐electrical setup. The resulting experimental data on electrical and thermal transport properties taken on individual nanodevices can be combined to extract ZT, guide device optimization and dynamical tuning of the thermoelectric properties.

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“…Single electron transistors made of axial InAs/InP nanowire heterostructures (quantum dots) [ 47 , 48 ], axial and radial NW heterostructures applied to solar cells [ 16 ] and other core-shell devices [ 49 , 50 ], light emitting diodes [ 51 ], lasers [ 52 ], photodetectors [ 53 , 54 ], thermoelectric devices [ 55 , 56 ], sensors [ 57 ], spin based quantum systems [ 58 , 59 , 60 ], topological qubits based on Majorana physics [ 61 , 62 ], and many others have been reported. Moreover, homogeneous nanowires and heterostructured nanowires are widely employed as test-bed platforms for investigating basic physics phenomena, including properties of materials [ 63 , 64 , 65 ], ion gating mechanisms [ 66 , 67 , 68 , 69 ], advanced quantum concepts [ 45 ], hybrid semiconductor-superconductors systems [ 70 , 71 ], etc.…”

Section: Semiconductor Nanowires and Nanowire Arraysmentioning

confidence: 99%

Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays

et al. 2021

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Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials and artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials.

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Suspended InAs Nanowire-Based Devices for Thermal Conductivity Measurement Using the 3ω Method

Cited by 20 publications

References 44 publications

Conductometric Sensing with Individual InAs Nanowires

Conductometric Sensing with Individual InAs Nanowires

Electrostatic Control of the Thermoelectric Figure of Merit in Ion‐Gated Nanotransistors

Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays

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