Survey of Cryogenic Power Electronics for Hybrid Electric Aircraft Applications

Mhiesan, Haider; Hossain, Maksudul; Rashid, Arman Ur; Wei, Yuqi; Mantooth, Alan

doi:10.1109/aero47225.2020.9172807

Cited by 17 publications

(3 citation statements)

References 22 publications

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“…Existing research has already demonstrated the feasibility and potential of cryogenic power electronics. This information is further reinforced by the results of the latest paper ([8], [9], [10], [11]) according to which the main power components (power modules, bus bars, passive components...) have better performance at lower temperatures, thus increasing the overall efficiency and power density of cryogenic power converters.…”

Section: Power Electronicsmentioning

confidence: 90%

ASCEND: The first step towards cryogenic electric propulsion

Ybanez

Colle

Nilsson

et al. 2022

IOP Conf. Ser.: Mater. Sci. Eng.

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If a cold source such as liquid H2 or cryogenic fuel is available, cryogenic and high-temperature superconductivity technologies are promising to significantly increase performance of electric propulsion systems. A first study for aeronautic applications shows that the power density of electrical components could be multiplied 2 to 3 times to reach more than 30kW/kg for electric motors and power electronics, the weight of cables can be considerably reduced, and the efficiency increased by more than 50% with a voltage between below 500 V for multi-megawatt applications. With ASCEND, AIRBUS intends to demonstrate the potential and feasibility of a cryogenic and superconducting powertrain to breakthrough aircraft electric propulsion performance.

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Section: Power Electronicsmentioning

confidence: 90%

ASCEND: The first step towards cryogenic electric propulsion

Ybanez

Colle

Nilsson

et al. 2022

IOP Conf. Ser.: Mater. Sci. Eng.

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“…17). From an application perspective, the ability of power electronics to operate at cryogenic temperatures are desirable for weight sensitive transport applications such as shipping [280] and aircraft [281]. The emergence of reliable power devices which can operate at cryogenic temperature is especially important for aeronautics and space power systems where temperature extremes to below -200 °C [282] can be expected over the operating life of deep space missions.…”

Section: Extreme Temperature Robustnessmentioning

confidence: 99%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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“…Unlike power switching operation at high temperatures, silicon carbide (SiC) proves to be an inferior counterpart in cryogenic converter applications. On the contrary, gallium nitride (GaN) switches offer superior characteristics in terms of desired electrical properties for a power converter as found in the literatures [1][2]. Although GaN devices are entitled to better figure-of-merit (FOM), the lack of available high voltage (HV) devices can limit the possibility of its high-power applications.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures

Hossain

Wei

Rashid

et al. 2022

IOP Conf. Ser.: Mater. Sci. Eng.

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The cryogenic operation of power converters integrated with the superconducting electric machines can leverage the lower parasitic, lower core material, and insulation requirement to reduce weight and increase power density in aerospace applications. To that end, Gallium Nitride High Electron Mobility Transistor (GaN HEMT) has recently proven to be the most viable option for the cryogenic converter operation. However, the topology selection and optimization are greatly influenced by the current/voltage rating of the power devices. Although series connected HEMTs can increase the blocking voltage, the dynamic voltage imbalance issue stemming from device parameter fluctuations, the larger number of required isolated gate driver makes the need for single high blocking voltage devices more compelling. This is even more pronounced in GaN due to its higher operating frequency which stems from the lower input capacitance. Although 900V cascode GaN HEMTs are now commercially available, single-chip high voltage HEMTs are attractive due to their zero reverse recovery charge, and lower package bonding parasitics. In this paper, a 1200V enhancement-mode GaN HEMT from GaNPower International has been characterized at cryogenic temperature. A 63% decrease has been demonstrated in the on-resistance, Rds(on) from room temperature to -150°C. The threshold voltage shows a 1.2x increase from room temperature to cryogenic temperature (-178°C). The transconductance (Gfs) shows a 1.34x increase for a temperature difference of 175°C. The results translate to a lower conduction loss and a faster switching speed and unfold further possibility of GaN in cryogenic converter applications.

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Survey of Cryogenic Power Electronics for Hybrid Electric Aircraft Applications

Cited by 17 publications

References 22 publications

ASCEND: The first step towards cryogenic electric propulsion

ASCEND: The first step towards cryogenic electric propulsion

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Electrical characterization of a 1200V GaN HEMT at cryogenic temperatures

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