Surge current test of SiC MOSFET with planar Assembling and Joining Technology

Abstract

This paper introduces a novel packaging with planar Assembling and Joining Technology (AJT). The 1200V SiC MOSFET body diode with the new AJT has been investigated under surge current conditions. The test result of the planar AJT is compared with a standard TO-247-4 discrete component. Additionally, thermal impedance of both packages is measured and compared.