Surge Current Capability in lateral AlGaN/GaN Hybrid Anode Diodes with p-GaN/Schottky Anode

Low turn-on voltage rectifier using p-GaN gate AlGaN/GaN high electron mobility transistor for energy harvesting applications

“…The onset of hole injection induces more electrons at the channel to maintain charge neutrality, and therefore results in a significant increase of the drain current, which offers a solution for high current applications. 26) It should be noted that a thin oxide layer is observed between the 2 μm long gate electrode and p-GaN by TEM, which explains the high onset voltage of hole injection due to a non-optimized ohmic contact.…”

“…[23][24][25] Besides, p-GaN layer can be used to leverage hole current of gate p-n diode as another current path to enhance the on-state current capability. 26) In this paper, we have demonstrated an AC-DC rectifier with extremely low turn-on voltage by using p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) in diode configuration. The anode electrode is connecting the source and gate of p-GaN HEMT and the drain of HEMT is acting as the cathode.…”

Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN

“…Indeed, Schottky diodes may face high surge current up to 5 times its nominal current "outside safe operation area". To overcome this problem, hole injection is necessary, which is made possible by locally adding a p-GaN region on top of the AlGaN layer [8]. In the case of devices using such p-GaN regions, a good ohmic contact, with a low resistance, stable across a wide range of temperatures, is still quite difficult to obtain due to the high Schottky barrier height at the metal/p-GaN interface [9].…”