Surfactant-induced chemical ordering of GaAsN:Bi

Occena, Jordan; Jen, T.; Lu, H.; Carter, B. A.; Jimson, T. S.; Norman, A. G.; Goldman, R. S.

doi:10.1063/1.5045606

Cited by 9 publications

(5 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The improved surface flatness resulted from the surfactant effect of Bi. [ 28,29 ] The presence of Bi atoms on the surface changed the surface energy and enhanced the migration of In atoms during InPBi layer growth even at low growth temperature. By contrast, at a higher Bi flux of 3.0 × 10 −8 Torr, a dramatic increase in R a was observed in the samples grown at or below 320 °C.…”

Section: Resultsmentioning

confidence: 99%

Growth of InPBi on InP(311)B Substrate by Molecular Beam Epitaxy

Akahane

Matsumoto

Umezawa

et al. 2021

Physica Status Solidi (a)

View full text Add to dashboard Cite

The growth of InPBi by molecular beam epitaxy on an InP(311)B substrate is investigated. Bi atoms are incorporated into the samples grown at or below 350 °C. A Bi concentration of up to 5% is estimated by X‐ray diffraction and secondary mass spectroscopy measurements. Although the surface roughness increased with decreasing growth temperature and at a high Bi flux, Bi atoms are found to have surfactant effects on the surface flatness of the samples grown at a low Bi flux.

show abstract

Section: Resultsmentioning

confidence: 99%

Growth of InPBi on InP(311)B Substrate by Molecular Beam Epitaxy

Akahane

Matsumoto

Umezawa

et al. 2021

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…[5][6][7][8][9] It is widely accepted that the CuPt ordering results from surface reconstructions during epitaxial growth, and the (21) reconstruction, which is considered to be a prerequisite for the ordering, is also observed in bismides. [10][11][12] A perfectly CuPtB-type ordered zinc-blende AB0.5C0.5 alloy is a superlattice of alternating AB and AC monolayers on (1 ̅ 11) or (11 ̅ 1) planes, conventionally termed as B+ and B− subvariants.…”

Section: Introductionmentioning

confidence: 99%

Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys

Paulauskas

Čechavičius

Karpus

et al. 2020

Journal of Applied Physics

View full text Add to dashboard Cite

The GaAs1-xBix semiconductor alloy allows to achieve large bandgap reduction and enhanced spin-orbit splitting energy at dilute Bi quantities. The bismide is currently being developed for near-to midinfrared lasers, multi-junction solar cells, and photodetectors. In this structure-property relationship study of GaAsBi alloys, we report polarization dependent photoluminescence that reaches ratio up to 2.4 at room temperature. Polarization dependence is also presented using transmittance spectra, and also birefringence and linear dichroism. The optical anisotropy observations agree with predictions of point symmetry reduction in the CuPtB-type ordered GaAsBi phase. The structural ordering is investigated experimentally from the atomic-scale in molecular-beam epitaxy (MBE) grown samples on exact and miscut (001) GaAs substrates, as well as a sample composed of anti-phase domains in which the ordering axes are rotated by right angles. Since the conditions stabilizing the CuPtB ordered phase fall within the typical MBE growth regime of dilute bismides, the optical anisotropy in GaAsBi alloys is expected to be ubiquitous. These findings are important for the future development of GaAsBibased optoelectronics and also provide new means to analyze structurally complex bismide alloys.

show abstract

“…The so-called CuPt B -type ordering, whereby the concentration of Bi atoms is modulated on every second {111}B-type plane, has been observed using highresolution (scanning) transmission electron microscopy (STEM/TEM) [13,17,28]. It is widely accepted that the CuPt B -type modulation in III-V alloys is driven by surface reconstruction dynamics and is accompanied by the (2 × 1) reconstruction consisting of surface dimer rows [27,[29][30][31][32][33]. When deposited on flat (001) GaAs substrates, the ordering occurs on two of the four distinct sets of {111} planes.…”

Section: Introductionmentioning

confidence: 99%

Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys

et al. 2020

View full text Add to dashboard Cite

The distribution of alloyed atoms in semiconductors often deviates from a random distribution which can have significant effects on the properties of the materials. In this study, scanning transmission electron microscopy techniques are employed to analyze the distribution of Bi in several distinctly MBE grown GaAs 1−x Bi x alloys. Statistical quantification of atomic-resolution HAADF images, as well as numerical simulations, are employed to interpret the contrast from Bi-containing columns at atomically abrupt (001) GaAs-GaAsBi interface and the onset of CuPt-type ordering. Using monochromated EELS mapping, bulk plasmon energy red-shifts are examined in a sample exhibiting phase-separated domains. This suggests a simple method to investigate local GaAsBi unit-cell volume expansions and to complement standard X-ray-based lattice-strain measurements. Also, a single-variant CuPt-ordered GaAsBi sample grown on an offcut substrate is characterized with atomic scale compositional EDX mappings, and the order parameter is estimated. Finally, a GaAsBi alloy with a vertical Bi composition modulation is synthesized using a low substrate rotation rate. Atomically, resolved EDX and HAADF imaging shows that the usual CuPt-type ordering is further modulated along the [001] growth axis with a period of three lattice constants. These distinct GaAsBi samples exemplify the variety of Bi distributions that can be achieved in this alloy, shedding light on the incorporation mechanisms of Bi atoms and ways to further develop Bi-containing III-V semiconductors.

show abstract

Surfactant-induced chemical ordering of GaAsN:Bi

Cited by 9 publications

References 28 publications

Growth of InPBi on InP(311)B Substrate by Molecular Beam Epitaxy

Growth of InPBi on InP(311)B Substrate by Molecular Beam Epitaxy

Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys

Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys

Contact Info

Product

Resources

About