Surfaces and Interfaces: X-Ray Studies

Sauvage‐Simkin, M.

doi:10.1007/978-3-662-22223-2_3

Cited by 2 publications

(1 citation statement)

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“…In recent years, an increasing interest in the use of X-rays for the study of surfaces and interfaces has developed [4,5]. When compared with electron diffraction techniques such as LEED (low-energy electron diffraction) and RHEED (reflection high-energy electron diffraction), the main advantage of X-rays is the much smaller cross-section of interaction with atoms (of order (Zr 0 ) 2 , where Z is the atomic number, and r 0 = e 2 /mc 2 2.82 x 10 -13 cm is the classical electron radius; therefore, smaller than the corresponding electron-atom scattering cross-section by a factor (υ/c) 4 , where v is the electron velocity).…”

Section: Surface X-ray Diffractionmentioning

confidence: 99%

Application of Synchrotron Radiation to the Atomic and Electronic Structure of Semiconductors

Altarelli

1995

Acta Phys. Pol. A

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A brief review of the main experimental techniques exploiting synchrotron radiation in semiconductor physics is attempted. Topics emphasized include the study of surface and interface phenomena, such as surface structural properties (e.g. surface reconstruction) by X-ray dichraction, surface dynamical properties (e.g. adsorbate vibrational amplitudes) by the X-ray standing waves technique, etc. This review emphasizes brilliance (the phase-space density of photons) as the main figure of merit for many experimental techniques applicable to research in semiconductor physics. Examples of experiments made possible by the so-called "third generation", high-brilliance synchrotron sources are presented.

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Section: Surface X-ray Diffractionmentioning

confidence: 99%