2022
DOI: 10.1016/j.ces.2022.117618
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Surface wettability effect on heat transfer across solid-water interfaces

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Cited by 12 publications
(5 citation statements)
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“…Alkhwaji等 [16] 采用分子动力学方 法对水分子的热力学性质进行了研究, 并与实验结 果进行了比较, 结果表明, 模拟水分子的导热系 数、黏度、密度、比热容、比热压、普朗特数和体积 热膨胀系数均于实验结果相当接近, 证明了分子动 力学模拟的有效性. Hong等 [17] 通过模拟发现液态 水分子中存在具有一定间距的纳米气泡团. Xi等 [18] 研究了固体壁面与水分子间的传热机理, 结果表 明, 增大相互作用强度有利于水分子形成氢键网 络, 从而增强界面传热.…”
Section: 相互作用下 滑移长度随剪切速率呈非线性关系unclassified
“…Alkhwaji等 [16] 采用分子动力学方 法对水分子的热力学性质进行了研究, 并与实验结 果进行了比较, 结果表明, 模拟水分子的导热系 数、黏度、密度、比热容、比热压、普朗特数和体积 热膨胀系数均于实验结果相当接近, 证明了分子动 力学模拟的有效性. Hong等 [17] 通过模拟发现液态 水分子中存在具有一定间距的纳米气泡团. Xi等 [18] 研究了固体壁面与水分子间的传热机理, 结果表 明, 增大相互作用强度有利于水分子形成氢键网 络, 从而增强界面传热.…”
Section: 相互作用下 滑移长度随剪切速率呈非线性关系unclassified
“…Bonding Changes during Nucleation Boiling. Based on the judging criteria of the hydrogen bond by Xi et al, 34 when the distance R 1 between the two oxygen atoms of two water molecules is less than 3.6 Å, the distance R 2 between the donor hydrogen atom and the acceptor oxygen atom is less than 2.4 Å, and the angle θ between the vector connecting the two oxygen atoms and the vector connecting the oxygen and hydrogen atoms within the donor molecule is less than 30°, the hydrogen bond between two water molecules exists, as shown in Figure 2.…”
Section: Changes In the Number And Energy Of Hydrogen Bonds During Bu...mentioning
confidence: 99%
“…Molecular dynamics (MD) simulations have been widely deployed, with a number of studies finding G to be linearly correlated to the surface wettability. In alignment with experimental practices, some studies controlled the wettability through the implementation of SAMs, reporting a linear relationship between G and W SL . However, a large number of MD studies investigating G opted to directly alter the solid/liquid interaction strength ε SL , rather than manipulating interfacial interactions via the SAM functional group. Through this artificial “wettability-tuning” approach, Alexeev et al found G to be linearly correlated to W SL at graphene/water interfaces. Similarly, Ramos-Alvarado et al noted a linear relation between G and W SL at silicon/water interfaces for both crystallographic planes studied.…”
Section: Introductionmentioning
confidence: 99%