Surface transfer doping of diamond with a molecular heterojunction

Abstract

Band alignment of vanadium oxide as an interlayer in a hafnium oxide-silicon gate stack structure J. Appl. Phys. 112, 084105 (2012) Local density of states analysis using Bader decomposition for N2 and CO2 adsorbed on Pt (110) Fermi-level depinning at the metal-germanium interface by the formation of epitaxial nickel digermanide NiGe2 using pulsed laser anneal Appl. Phys. Lett. 101, 172103 (2012) Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface Appl.

Fluorination of Cu(001) Surface by C60F48 Molecule Adsorption

“…6 The interaction between zinctetraphenylporphyrin and fullerenes C 60 F 48 has been studied to understand the growth behavior of "bottom-up" functional nanostructures involving strong donor−acceptor heterojunctions in molecular electronics. 7,8 Several attempts have been made to study the adsorption and molecular electronic structure of fluorinated fullerenes on semiconducting substrates. Molecular thin films of C 60 F 18 , C 60 F 36 , and C 60 F 48 on the surface of Si(111)−7 × 7 has been researched by means of Scanning Tunneling Microscopy (STM).…”

Diamond surface conductivity: Properties, devices, and sensors

“…While providing supporting evidence for the surface transfer doping model proposed as being responsible for the charge accumulation at the surface of diamond, this work additionally presented the possibility of using other molecular species as surface acceptors on the hydrogen-terminated diamond surface. Surface transfer doping of diamond with other molecular species, such as 7,7,8,8-tetracyanoquinodimethane and its fl uorinated derivative, 6 and molecular heterolayers 7 have subsequently been demonstrated. Recently, Russell et al have extended this work further to include the use of the transition metal oxide MoO 3 as a surface electron acceptor material, which may offer improved stability and performance in diamond electronic devices.…”

A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor

“…Up to this date, water [2], fullerenes (C 60 ) [3], fluorinated Fullerenes (C 60 F x , x = 18, 36, 48) [4], zinc-tetraphenylporphyrin (ZnTPP) coupled C 60 F 48 [5], Tetrafluoro-tetracyanoquinodimethane (F 4 -TCNQ) [6], and more recently transition-metal oxides (TMOs) [7]- [10], have been investigated as surface acceptors for D:H. Among these, TMOs such as MoO 3 , WO 3 , ReO 3 and V 2 O 5 , stand out with their unique properties of wide-band gap and high electron affinity. As a typical TMO, MoO 3 was first used as acceptor on Diamond:H and metal-oxide-semiconductor field-effect transistors (MOSFETs) have been demonstrated [11].…”