Surface topology of GaAs(100) after focused ion beam implantation of Si++

Abstract

GaAs(100) was implanted with Si++ doses ranging from 3×1013 to 3×1016 cm−2 using a focused ion beam. The surface topology and roughness of implanted lines and squares was studied by atomic force microscopy. Above a threshold dose, protrusions of the ion beam treated areas in the range of 1–15 nm in heights and an increase in surface roughness were found. The height of the protrusions and surface roughness increase with increasing implantation dose up to a saturation level. Both the onset of substrate bulging and saturation of the effect are both dependent on the linewidth of the implant. Different causes for the protrusions are discussed. From Monte Carlo simulations, it is deduced that the volume expansion is most likely due to the creation of vacancies during implantation.

Surface modifications by swift heavy-ion irradiation of indium phosphide

“…Another similar observation for (001) InP irradiated by 150 MeV Fe ions was a decrease in roughness for the same uence of 1 •10 14 cm −2 [6]. Even for low-energy irradiations, quite similar observations were reported for surface topography of GaAs (110) after high uence low-energy Si + ion irradiation, where the height of the observed hillock-like protrusions increases up to certain uence saturation level [20]. The uence irradiations are smooth on that scale (the height scale for all scans is 20 nm/division).…”

Tuning Surface Wettability at the Submicron-Scale: Effect of Focused Ion Beam Irradiation on a Self-Assembled Monolayer

“…This result may be attributed to trapped Ga + ions and atomic vacancies, which are introduced into the SAM and/or substrate by FIB irradiation. 40,41 The chemical composition and associated depth profile of the pristine and FIB-irradiated FOPA samples were investigated by GD−OES. Figure 4, parts a and b, depicts the GD−OES profiles of the samples.…”

Selective Growth of Porous Silicon on Focused Ion Beam Patterns

“…[10][11][12][13][14] The principle of this concept is illustrated in Fig. 1 showing schematically an anodic polarization curve of an n-type semiconductor in the dark.…”