Surface textured molybdenum doped zinc oxide thin films prepared for thin film solar cells using pulsed direct current magnetron sputtering

Lin, Yi‐Cheng; Wang, B.L.; Yen, W. T.; Shen, Chih-Hsiung

doi:10.1016/j.tsf.2011.03.014

Cited by 29 publications

(11 citation statements)

References 17 publications

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“…For uniformity, the grain sizes mentioned below were estimated by XRD. As the Mo content increases, the grain size increases for the films deposited at 1 × 10 −2 mbar and at 473 K. The reverse result in grain size variation was observed in case of films deposited at 673 K [18].…”

Section: Surface Morphological Studiesmentioning

confidence: 80%

Preparation and Characterization of R.F. Magnetron Sputtered Mo:ZnO Thin Films

Srinivasarao

Madhuri

et al. 2013

Indian Journal of Materials Science

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The ZnO and Mo:ZnO thin films were deposited by radio frequency magnetron sputtering on quartz and intrinsic silicon (100) substrates at a fixed combined partial pressure 1×10 −2 mbar of Ar + O 2 and substrate temperatures of 473 K and 673 K. The effect of Molybdenum doping on ZnO thin films with different Molybdenum concentrations (1-2 atomic percent) was studied with the help of structural and microstructural characterization techniques. The films deposited at a substrate temperature of 473 K exhibited strong -axis orientation with predominant (002) peak. At 673 K, along with (002) orientation, other orientations (100), (101), (220), and (103) were also observed. Among these, the (220) peak indicates the cubic phase of ZnO. With increasing Molybdenum concentration, the cubic phase of ZnO disappeared, and the (002) orientation became strong and intense. The composition analysis reveals that the undoped ZnO films deposited at 473 K have oxygen deficiency, and the ratio of Zn/O is improved with increasing Mo atomic percent in ZnO. The surface morphological features reveal that the undoped ZnO films were found to be uniform and have grain size of around 30 nm. The optical energy gap of the undoped ZnO films is 3.05 eV and increases with increasing Mo concentration. The thickness of the films is around 456 nm.

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Section: Surface Morphological Studiesmentioning

confidence: 80%

Preparation and Characterization of R.F. Magnetron Sputtered Mo:ZnO Thin Films

Srinivasarao

Madhuri

et al. 2013

Indian Journal of Materials Science

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“…6. Moreover, n = 1/2 is a better fit, which shows the direct transition of the electron in the ZnO and Mo:ZnO films [33][34][35], and the resultant energy gap is 3.11 eV.…”

Section: Optical Propertiesmentioning

confidence: 93%

“…The resistivity of the ZnO films deposited at 673 K was 1.4 × 10 −4 Ωm and decreased to 6.7 × 10 −5 Ωm with the increasing at.% of Mo. The resistivity was lower for the films deposited at 673 K than for the films deposited at 473 K. This is not only due to the presence of large number of free carriers [38,39] introduced by substitution of sufficient at.% Mo in the Zn site but also due to the improvement in the crystallinity, which minimizes grain boundary scattering, in turn increasing the carrier lifetime [34,40,41].…”

Section: Optical Propertiesmentioning

confidence: 98%

Physical investigations on transparent conducting Mo:ZnO thin films

Srinivasarao

Mohanbabu²,

Mukhopadhyay

2018

Adv Compos Hybrid Mater

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Molybdenum (Mo)-doped zinc oxide (ZnO) thin films were deposited by radio frequency (r.f.) magnetron sputtering on quartz and Si (100) substrates at two different substrate temperatures (473 and 673 K) and at a fixed combined partial pressure 5 Pa of Argon and O 2 . The atomic percentage (at.%) of (Mo) in ZnO was increased from 1 to 2 at.%. The results of X-ray diffraction revealed that the ZnO films deposited at 5 Pa at a substrate temperature of 473 K were highly c-axis oriented with a predominant (002) crystallographic orientation. The intensity of (002) decreased with an increase in the atomic percentage of Mo. Moreover, a growth in the (100), (101), (220), and (103) orientations was observed. The energy-dispersive spectrum (EDS) of the Mo:ZnO films deposited at 5 Pa and 473 K was substoichiometric, whereas the films deposited at 673 K were nearly stoichiometric. The surface morphology of the ZnO films is porous when deposited at 473 K. The optical energy gap of the ZnO films deposited at 473 K increased from 3.11 to 3.64 eV with an increase in the atomic percentage of Mo. The electrical resistivity of the ZnO films decreased from 1.7 × 10 −4 to 6.7 × 10 −5 Ωm with an increase in the substrate temperature and atomic percentage of Mo. The thickness of the films measured by spectroscopic ellipsometry is 440 nm.

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“…ZnO is one of the most promising candidates to replace ITO because of its low toxicity, availability and low production cost. It can also be produced on a large scale and presents high stability in the hydrogen plasma and thermal cycles used in the production device (Sahu and Huang, 2006;Das and Ray, 2003;Lin et al, 2011;Tohsophon et al, 2011).…”

Section: Introductionmentioning

confidence: 99%

Optical and Structure Analysis of ZnO:Al Film

Trindade¹,

Chaves²,

Bortoleto³

et al. 2017

American Journal of Engineering and Applied Sciences

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ZnO and ZnO:Al are wide-bandgap semiconductors which have many applications, mainly as transparent conducting films. Thin films of these compounds were deposited onto glass and silicon substrates by RF magnetron sputtering for the investigation of structural and optical characteristics. The XRD results show that the films present wurtzite structure. The formation of a polycrystalline film having a preferential crystallographic orientation in the plane (002) is observed in the doped samples. The Al incorporated films exhibited optical transmittance above 80% in the visible spectrum and a clear absorption band in the infrared due to free carriers. Additionally, the optical band gap around 3.48 eV is significantly above the values for the intrinsic ZnO (3.25 eV). Photoluminescence (PL) measurements showed a broad emission band in the visible region. In addition, PL emission lines at 3.32 and 3.37 eV showed up in Al incorporated films, and were related to excitonic emissions. The results show that the Burstein-Moss effect plays a central role in determining the optical characteristics of the doped material.

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Surface textured molybdenum doped zinc oxide thin films prepared for thin film solar cells using pulsed direct current magnetron sputtering

Cited by 29 publications

References 17 publications

Preparation and Characterization of R.F. Magnetron Sputtered Mo:ZnO Thin Films

Preparation and Characterization of R.F. Magnetron Sputtered Mo:ZnO Thin Films

Physical investigations on transparent conducting Mo:ZnO thin films

Optical and Structure Analysis of ZnO:Al Film

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