1992
DOI: 10.1007/978-94-015-1301-2_5
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Surface Studies of Layered Materials in Relation to Energy Converting Interfaces

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1992
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Cited by 28 publications
(18 citation statements)
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“…Up to now, this hypothesis has not been demonstrated yet for electrochemical alignments and has been proven to not be valid for classical semiconductors. 27 Additionally, the Mott-Schottky approach is based on several assumptions which are not always met experimentally. 28 To obtain direct information on heterojunctions and the transitivity of band alignment, the heterostructure formation has to be studied directly, i.e.…”
Section: Introductionmentioning
confidence: 99%
“…Up to now, this hypothesis has not been demonstrated yet for electrochemical alignments and has been proven to not be valid for classical semiconductors. 27 Additionally, the Mott-Schottky approach is based on several assumptions which are not always met experimentally. 28 To obtain direct information on heterojunctions and the transitivity of band alignment, the heterostructure formation has to be studied directly, i.e.…”
Section: Introductionmentioning
confidence: 99%
“…The possibility of preparing GaSe high quality thin films through the so-called van der Waals epitaxy [4][5][6][7] has led to a renewed interest in this semiconductor due to its potential optoelectronic applications. In this issue, detailed information on doping processes plays an important role.…”
Section: Introductionmentioning
confidence: 99%
“…Gallium selenide ͑GaSe͒ has been widely investigated in the last years because of its outstanding nonlinear optical properties. [1][2][3][4][5][6][7][8] The possibility of preparing GaSe high-quality thin films through the so-called van der Waals epitaxy [9][10][11][12] has lead to a renewed interest because of the potential optoelectronic applications. The problem of doping, that was early investigated without drawing definitive conclusions, [13][14][15][16][17][18] has been recently attacked by other groups that have specially studied the role of group II impurities as acceptors in GaSe.…”
Section: Introductionmentioning
confidence: 99%