Surface Studies of Layered Materials in Relation to Energy Converting Interfaces

Jaegermann, Wolfram

doi:10.1007/978-94-015-1301-2_5

Cited by 28 publications

(18 citation statements)

References 214 publications

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“…Up to now, this hypothesis has not been demonstrated yet for electrochemical alignments and has been proven to not be valid for classical semiconductors. 27 Additionally, the Mott-Schottky approach is based on several assumptions which are not always met experimentally. 28 To obtain direct information on heterojunctions and the transitivity of band alignment, the heterostructure formation has to be studied directly, i.e.…”

Section: Introductionmentioning

confidence: 99%

Energy-Band Alignment of BiVO₄ from Photoelectron Spectroscopy of Solid-State Interfaces

et al. 2018

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The interface formation and energy-band alignment at interfaces between polycrystalline BiVO 4 and high-work-function RuO 2 and low-work-function Sn-doped In 2 O 3 (indium tin oxide) have been studied using photoelectron spectroscopy with in situ thin-film deposition of the contact materials. The Schottky barrier heights for both contact films differ by 0.85 eV, which is smaller than the difference in work function and the differences observed for other semiconducting oxides, indicating a partial Fermi-level pinning. On the basis of the present results and the comparison with other photoelectrochemically active oxides, the differences of band alignment obtained from solid/ electrolyte and from solid/solid interfaces, which can exhibit substantial differences, are discussed.

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Section: Introductionmentioning

confidence: 99%

Energy-Band Alignment of BiVO₄ from Photoelectron Spectroscopy of Solid-State Interfaces

et al. 2018

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“…The possibility of preparing GaSe high quality thin films through the so-called van der Waals epitaxy [4][5][6][7] has led to a renewed interest in this semiconductor due to its potential optoelectronic applications. In this issue, detailed information on doping processes plays an important role.…”

Section: Introductionmentioning

confidence: 99%

Tin-related double acceptors in gallium selenide single crystals

Sánchez-Royo

Errandonea

Segura

et al. 1998

Journal of Applied Physics

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Gallium selenide single crystals doped with different amounts of tin are studied through resistivity and Hall effect measurements in the temperature range from 30 to 700 K. At low doping concentration tin is shown to behave as a double acceptor impurity in gallium selenide with ionization energies of 155 and 310 meV. At higher doping concentration tin also introduces deep donor levels, but the material remains p-type in the whole studied range of tin doping concentrations. The deep character of donors in gallium selenide is discussed by comparison of its conduction band structure to that of indium selenide under pressure. The double acceptor center is proposed to be a tin atom in interlayer position, with a local configuration that is similar to that of tin diselenide. The hole mobility exhibits an anomalous dependence on the tin content, attaining its maximum value in the ingot with 0.2% nominal tin content. This is proposed to be related to impurity pairing effects giving rise to thermal shallow acceptors with low ionization energy and low carrier scattering cross section, making the hole mobility to be controlled by phonon scattering mechanisms even for relatively high impurity content.

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“…Gallium selenide ͑GaSe͒ has been widely investigated in the last years because of its outstanding nonlinear optical properties. [1][2][3][4][5][6][7][8] The possibility of preparing GaSe high-quality thin films through the so-called van der Waals epitaxy [9][10][11][12] has lead to a renewed interest because of the potential optoelectronic applications. The problem of doping, that was early investigated without drawing definitive conclusions, [13][14][15][16][17][18] has been recently attacked by other groups that have specially studied the role of group II impurities as acceptors in GaSe.…”

Section: Introductionmentioning

confidence: 99%

Transport properties of nitrogen doped p-gallium selenide single crystals

Sánchez‐Royo

Segura

Chévy³

et al. 1996

Journal of Applied Physics

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Nitrogen doped gallium selenide single crystals are studied through Hall effect and photoluminescence measurements in the temperature ranges from 150 to 700 K and from 30 to 45 K, respectively. The doping effect of nitrogen is established and room temperature resistivities as low as 20 ⍀ cm are measured. The temperature dependence of the hole concentration can be explained through a single acceptor-single donor model, the acceptor ionization energy being 210 meV, with a very low compensation rate. The high quality of nitrogen doped GaSe single crystals is confirmed by photoluminescence spectra exhibiting only exciton related peaks. Two phonon scattering mechanisms must be considered in order to give quantitative account of the temperature dependence of the hole mobility: scattering by 16.7 meV A 1 Ј homopolar optical phonons with a hole-phonon coupling constant g 2 ϭ0.115 and scattering by 31.5 meV LO polar phonon with a hole Fröhlich constant ␣ hЌ ϭ0.741.

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Surface Studies of Layered Materials in Relation to Energy Converting Interfaces

Cited by 28 publications

References 214 publications

Energy-Band Alignment of BiVO₄ from Photoelectron Spectroscopy of Solid-State Interfaces

Energy-Band Alignment of BiVO₄ from Photoelectron Spectroscopy of Solid-State Interfaces

Tin-related double acceptors in gallium selenide single crystals

Transport properties of nitrogen doped p-gallium selenide single crystals

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Surface Studies of Layered Materials in Relation to Energy Converting Interfaces

Cited by 28 publications

References 214 publications

Energy-Band Alignment of BiVO4 from Photoelectron Spectroscopy of Solid-State Interfaces

Energy-Band Alignment of BiVO4 from Photoelectron Spectroscopy of Solid-State Interfaces

Tin-related double acceptors in gallium selenide single crystals

Transport properties of nitrogen doped p-gallium selenide single crystals

Contact Info

Product

Resources

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Energy-Band Alignment of BiVO₄ from Photoelectron Spectroscopy of Solid-State Interfaces

Energy-Band Alignment of BiVO₄ from Photoelectron Spectroscopy of Solid-State Interfaces