Surface structure imaging, electronically induced modifications and electroluminescence of porous silicon by scanning tunneling microscopy

Enachescu, M.; Hartmann, E.; Kux, A.; Koch, F.

doi:10.1016/0022-2313(93)90131-6

Cited by 15 publications

(4 citation statements)

References 15 publications

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“…The surface shown in (b) is almost fully composed of particles and pores having the same size as in (a). The observed structures are similar to the surface features of porous Si observed previously by AFM and STM [4][5][6]16].…”

Section: Resultssupporting

confidence: 87%

“…Here r c is a characteristic dimension of the well. This is what equation (5) gives. This reasoning has used the fact that the second charge is small.…”

Section: Appendix a An Example Of A System Described By Hamiltonian (4)mentioning

confidence: 62%

“…Nanoporous Si shows strong room temperature photoluminescence attributed to quantum confinement of electron-hole pairs in nanosize details of the material [3]. Investigations by STM [4,5] and atomic force microscopy (AFM) [6] have confirmed the existence of such structures on top of porous Si layers.…”

Section: Introductionmentioning

confidence: 97%

See 2 more Smart Citations

A novel room temperature oscillatory phenomenon in photoinduced scanning tunnelling microscope spectra of porous Si

Afonin

Гуревич

Laiho

et al. 1998

J. Phys.: Condens. Matter

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A new phenomenon of periodic oscillations is observed in I-V characteristics of porous silicon under illumination by visible light. The measurements are performed at room temperature using a scanning tunnelling microscope. The heights of the oscillation peaks appear to be a linear function of the oscillation number. The experimental value of the Coulomb energy determined from the oscillation period is much smaller than . The oscillations are attributed to a Coulomb effect, i.e. to the periodic trapping of a multi-electron level in a quantum well within a Si nanocrystal under the combined influence of the Coulomb interaction among the carriers and the variation of the potential difference between the STM tip and the semiconductor surface.

show abstract

Section: Resultssupporting

confidence: 87%

“…Here r c is a characteristic dimension of the well. This is what equation (5) gives. This reasoning has used the fact that the second charge is small.…”

Section: Appendix a An Example Of A System Described By Hamiltonian (4)mentioning

confidence: 62%

See 1 more Smart Citation

A novel room temperature oscillatory phenomenon in photoinduced scanning tunnelling microscope spectra of porous Si

Afonin

Гуревич

Laiho

et al. 1998

J. Phys.: Condens. Matter

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show abstract

“…It is usually difficult to obtain high-resolution scanning tunneling microscopy (STM) images of porous silicon (PS) surfaces, due in part to the high resistivity of the hydrided silicon surface, and also the uneven topography. Many STM studies have been published [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15], but we are not aware of any that show clear atomic resolution. A representative display from a PS surface is shown in figure 1.…”

mentioning

confidence: 99%

Atomically resolved structure of vacuum-heated porous silicon

Andrienko

Haneman

2000

J. Phys.: Condens. Matter

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We report atomic resolution in scanning tunneling microscopy studies of porous silicon surfaces, after vacuum heat treatment at 850 °C and above. The (100) sample surfaces show some 2 × 1 reconstruction as for single-crystal (100) surfaces, but the (111) samples do not show any clear reconstructions, probably because the column tops are too small for large structures such as 7 × 7 to form. The atomic planes on the column tops are parallel to the substrate for both (100) and (111) samples, in agreement with low-energy electron diffraction studies.

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Pore Formation on n-InP

Schmuki

Santinacci

Djenizian

et al. 2000

phys. stat. sol. (a)

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The present work deals with localized dissolution processes of n-type InP(100). Pore growth can be electrochemically initiated on the n-type material in the dark in HCl, HBr and HF solutions and leads after extended polarization to the formation of a porous InP structure. The porous structures were characterized by SEM, AES, and PL measurements. The pore morphology depends strongly on the electrochemical conditions and the type of halogen acid present in the electrolyte. AES depth profiles show that the composition of the porous layer is strongly affected by the electrolyte. For all electrolytes depletion of In was observed; this effect is the strongest for HBr and the weakest for HF. Uptake of electrolyte anions is the highest for HBr and lowest for HF. From scratch experiments it is clear that the pore initiation process is strongly influenced by surface defects. The morphology of the dissolution process also strongly depends on illumination as assessed by an experiment using a laser beam for a local surface illumination. At high illumination intensity, electropolishing instead of pore formation takes place. The finest pore structure was obtained in the dark. Structures formed in HF show visible photoluminescence in the yellow to red range of the spectrum, whereas for HCl and HBr treated samples no significant visible PL was obtained.

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Surface structure imaging, electronically induced modifications and electroluminescence of porous silicon by scanning tunneling microscopy

Cited by 15 publications

References 15 publications

A novel room temperature oscillatory phenomenon in photoinduced scanning tunnelling microscope spectra of porous Si

A novel room temperature oscillatory phenomenon in photoinduced scanning tunnelling microscope spectra of porous Si

Atomically resolved structure of vacuum-heated porous silicon

Pore Formation on n-InP

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