Surface structure and electrical properties of Ge films on semi-insulating GaAs substrates

Mitin, V. F.; Kholevchuk, V. V.; Конакова, Р. В.; Venger, É. F.; Odarich, V. A.; Руденко, О. В.; Semen’ko, M. P.; Khimenko, M. V.

doi:10.1109/miel.2002.1003222

Cited by 1 publication

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It can be seen that the transmittance for most spectral range decreases with increasing thickness, where a larger quantity of light is scattered in the material. The reflectance is larger for the thinner film, this agrees with the result of author [10]. There appears to be edges near the expected energy values of the band gaps, corresponding to the indirect (∼0.6 eV) and the direct (∼0.…”

Section: Resultssupporting

confidence: 90%

“…On the other hand, the reflection coefficient of germanium films exceeds the value corresponding to bulk germanium [9]. It is possible to transform amorphous deposited films into crystalline structure by annealing the 2 Physics Research International specimens in vacuum at 300 ∘ C [10]. This multiplicity of properties makes such films suitable for broad usage in manufacturing a number of electronic devices such as light detectors, heterojunctions, and sensors for temperature and magnetic field.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Structural and Optical Properties of Germanium Thin Films Prepared by the Vacuum Evaporation Technique

Al-Sharafi

Mohyeddine

Mohammed

et al. 2014

Physics Research International

View full text Add to dashboard Cite

Germanium (Ge) thin films have been deposited onto the glass substrates by the vacuum evaporation technique. The effect of annealing temperature on the structural and optical properties of the germanium thin films was investigated. The structural and optical properties of thin films were characterized by XRD, SEM, and UV-Vis techniques. XRD results showed that the structure of the deposited thin films changed from amorphous phase for the films, which deposited at room temperature, to crystalline phase for the films, which deposited at high temperature. Optimum temperature to obtain a good crystalline structure was 525 ∘ C. The SEM image also showed that the crystallization of the thin films is increased with increasing of annealing temperature. Transmittance and reflectance spectral were used to calculate the absorption coefficient. Two absorption edges in two spectral regions were distinguished according to direct and indirect electron transitions. Energy band gap was calculated by using the Tauc relationship for both direct and indirect electron transitions. The average value of was equal to 0.79 eV and 0.61 eV for direct and indirect transitions, respectively.

show abstract

Section: Resultssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%