Surface strengthening of Ti3SiC2 through magnetron sputtering of Mo and Zr and subsequent annealing

Joining of Ti3SiC2 by Magnetron Sputtering a Layer of Cu or Zr Followed by Heat Treating at Relatively Low Temperatures

“…2(b) that ZrSi 2 and an unidentified phase marked “•” appeared. According to Guo et al 's work, 16 the unidentified phase should be the Zr–Si phase that has lower Si content than the ZrSi 2 phase. Therefore, Si atoms diffused from the Ti 3 SiC 2 substrate into the Zr interlayer and reacted with Zr to form the Zr–Si compounds at the interface, which is in accordance with the results of Guo and colleagues.…”

“…The joining was conducted in a furnace under a flowing argon atmosphere. The joining temperature was chosen as 950°C for the Ti 3 SiC 2 /Cu/Ti 3 SiC 2 joint and 1100°C for the Ti 3 SiC 2 /Zr/Ti 3 SiC 2 joint according to the results of Guo et al , 15,16 while the holding time was set as 120 min. The heating rate was 15°C/min in all runs, and the joints were cooled down to room temperature within the furnace after bonding.…”

“…Therefore, studies on the joining of Ti 3 SiC 2 at relatively low bonding temperature are significant for promoting its application. Recently, Guo et al 15,16 in our group used the magnetron‐sputtering‐deposited Cu or Zr film and subsequent annealing in a temperature range of 900°–1100°C, to modify the surface hardness of Ti 3 SiC 2 . For Cu‐coated Ti 3 SiC 2 , owing to the copper‐induced topological transformation from Ti 3 SiC 2 to TiC x , the surface hardness was enhanced.…”