Surface state trapping models for SnO2-based microhotplate sensors

Ding, Junhua; McAvoy, Thomas J.; Cavicchi, Richard E.; Semancik, Steve

doi:10.1016/s0925-4005(01)00765-1

Cited by 149 publications

(113 citation statements)

References 10 publications

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“…Based on the results summarized above and other literature reports, the oxygen state operating in the 100°C < T < 250°C range can be assigned to O 2 - [22,33,35,40].…”

Section: Characterization Of Operating Oxygen Sates By Conductometricmentioning

confidence: 70%

“…Although transport of charge carriers across the semiconductor surface is a complex process, the electron transport dynamics is satisfactorily described by field effects arising from the coulombic charge of both the charge carriers and surface states (including oxygen states O n-), and iii) electron-lattice interactions [3][4][5][6][7]12,14,29,33]. G* is also a parameter that includes the influence on the surface by the gas-phase surroundings and accounts for the concentration of reactive gas-phase [46].…”

Section: Filmsmentioning

confidence: 99%

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Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis

Gonzalez¹,

Dunford²,

Du³

et al. 2013

Journal of Solid State Chemistry

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/npsi/ctrl?lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=fr Access and use of this website and the material on it are subject to the Terms and Conditions set forth at http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://dx.doi.org/10.1016/j.jssc.2013.02.002 Chemistry, 201, pp. 35-40, 2013-02-10 Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis Gonzalez, Carlos M.; Dunford, Jeffrey L.; Du, Xiaomei; Post, Michael L. Abstract: CuWO 4 thin-films were deposited by pulsed laser deposition onto an insulating substrate. The temperature dependence of the electronic conductivity of CuWO 4 thin-films was determined over the 100 °C -500 °C temperature range in a synthetic air atmosphere. Additionally, variations of conductivity at 300°C and 500°C have been measured for oxygen partial pressures (0.1 atm < p(O 2 ) < 0.9 atm) in nitrogen. The apparent activation energy ∆E a for the electrical conduction has been estimated. The study of the temperature effect on the electron transport properties of CuWO 4 thin-films reveals the operation of two temperature-dependent oxygen states. The effect of varying oxygen concentration on the electronic properties is discussed in detail. The electrochemical nature of the operating oxygen states for the 100°C -500 °C temperature range is deduced using a physicochemical model that relates electronic conductivity with oxygen partial pressure and temperature. Journal of Solid State Characterization of Carrier States in CuWO

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“…Based on the results summarized above and other literature reports, the oxygen state operating in the 100°C < T < 250°C range can be assigned to O 2 - [22,33,35,40].…”

Section: Characterization Of Operating Oxygen Sates By Conductometricmentioning

confidence: 70%

Section: Filmsmentioning

confidence: 99%

Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis

Gonzalez¹,

Dunford²,

Du³

et al. 2013

Journal of Solid State Chemistry

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“…Similarly, the physical chemical nature of the transient response has been discussed for the interaction of NO x with CuO thin-films [35]. Because a rise in electronic conductance often originates from an increase in the concentration of charge carriers [19,22,[24][25]28], the combined action of both temperature and chemical interaction between gas-phase species (NO x ) and the thin-film surface could have caused an increase in the concentration of change carriers (e.g. production of oxygen vacancies and surface electrons) [35,37].…”

Section: °Cmentioning

confidence: 99%

Copper tungstate thin-films for nitric oxide sensing

Gonzalez

Dunford

et al. 2012

Sensors and Actuators B: Chemical

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“…; Eq. (11)) plotted in light blue, and conductivity values plotted in red and dark blue based on a model given by Ding et al [11], and using parameters given by Ionescu et al [10]. The GEM theory model was applied since it was designed to accommodate spatial microstructural variation.…”

Section: Model Validationmentioning

confidence: 99%

“…6. The value of N d = 9.6 ×10 24 was from [10], and N d = 2.3 ×10 24 was from [11]. These effects are liable to be consequences of not considering morphological elements connected to conductivity, so that variations in oxygen ion concentration end up having an unrealistic and exaggerated impact on the electroceramic properties.…”

Section: Model Validationmentioning

confidence: 99%

Coupled microstructural and transport effects in n-type sensor response modeling for thin layers

Darcovich

García

Jeffrey

et al. 2008

Sensors and Actuators A: Physical

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The chemical gas sensor system of CO detection in a SnO 2 matrix was considered. A model was formulated which incorporated the coupled processes of gases diffusing into a porous ceramic and then participating in surface chemical reactions of adsorption, ionization and desorption. Microstructural properties of the sensor matrix were coupled with the diffusion and surface chemistry processes. The consequent surface chemical state served to partition bulk and grain boundary contributions to the n-type material conductance. Conductivity levels determined both with and without the presence of the target gas, CO, allowed sensor response to be determined as a function of film thickness.This simulation represents a modeling advance as it is the first to couple spatial variation of microstructural properties with diffusing gas species and the attendant surface chemistry and electroceramic properties, to predict sensor response as a function of film thickness. This will serve to be a useful design tool for ensuing materials research work towards improved sensor device development.Crown

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Surface state trapping models for SnO2-based microhotplate sensors

Cited by 149 publications

References 10 publications

Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis

Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis

Copper tungstate thin-films for nitric oxide sensing

Coupled microstructural and transport effects in n-type sensor response modeling for thin layers

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