1997
DOI: 10.1016/s0169-4332(97)00007-x
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Surface roughness effects in quantitative XPS: magic angle for determining overlayer thickness

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Cited by 95 publications
(58 citation statements)
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“…Therefore one concept was developed some years ago: the search for a so-called magic angle, one specific measurement angle at which the overlayer thickness is correctly determined at a rough surface with the smooth-layer approach. In agreement with other authors [18,20,21] we could show with our first simulations at facet's and pyramids ( Fig. 2(a)) [6] that such an angle is not of universal character, it depends on the real structure and lies within 45-50…”
Section: Homogeneous Overlayer -Magic Anglesupporting
confidence: 93%
See 1 more Smart Citation
“…Therefore one concept was developed some years ago: the search for a so-called magic angle, one specific measurement angle at which the overlayer thickness is correctly determined at a rough surface with the smooth-layer approach. In agreement with other authors [18,20,21] we could show with our first simulations at facet's and pyramids ( Fig. 2(a)) [6] that such an angle is not of universal character, it depends on the real structure and lies within 45-50…”
Section: Homogeneous Overlayer -Magic Anglesupporting
confidence: 93%
“…[17,18] Looking for an optimum measurement angle for the characterization of larger powder particles (diameter ALs) we modeled large spheres (diameter about 50 nm) covered homogeneously with an overlayer material (Fig. 2(b)).…”
Section: Homogeneous Overlayer -Magic Anglementioning
confidence: 99%
“…The differences of peak profile and the changes in the FWHM of the Si2p could be attributed to the distribution of chemically shifted Si2p lines arising from surface roughening as reported previously in literature [23,24]. In fact, it has been shown that surface roughening does have a major contribution to the overall spatial intensity of the photoelectron [25][26][27]. When this comparison was made with the silicon (100) surfaces, the Si-O-C levels were even more profound, especially for the p-type silicon (100) (Figure 2c) and n-type silicon (100) (Figure 2d).…”
Section: Resultssupporting
confidence: 76%
“…As photoelectron analyser, a standard system with a hemispherical energy filter and an electron detector based on discrete channeltrons was operated at 20 eV pass energy. The angle between x-ray source and entrance cone of the analyser is 54° (magic angle) [18] with the electron lens placed perpendicular to the probed surface. A sputtered Au foil served as reference sample in order to calibrate the energy analyser by making use of the Au4f7/2 transition at 84.0 eV [19].…”
Section: Methodsmentioning
confidence: 99%