Surface roughness effects in quantitative XPS: magic angle for determining overlayer thickness

Gunter, P. L. J.; Gijzeman, O.L.J.; Niemantsverdriet, J.W.

doi:10.1016/s0169-4332(97)00007-x

Cited by 100 publications

(66 citation statements)

References 15 publications

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“…Therefore one concept was developed some years ago: the search for a so-called magic angle, one specific measurement angle at which the overlayer thickness is correctly determined at a rough surface with the smooth-layer approach. In agreement with other authors [18,20,21] we could show with our first simulations at facet's and pyramids ( Fig. 2(a)) [6] that such an angle is not of universal character, it depends on the real structure and lies within 45-50…”

Section: Homogeneous Overlayer -Magic Anglesupporting

confidence: 93%

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Modeling of complex surface structures for ARXPS

Oswald

2008

Surface & Interface Analysis

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Angle-resolved X-ray photoelectron spectroscopy (ARXPS) has a great potential for nondestructive depth profiling in the nanometer thickness range. A method using computer simulation of ARXPS measurements is presented, which allows systematic studies on surfaces with artificial spatial inhomogeneity in the nanometer-range. Investigations of rough surfaces with varied structure sizes show that inhomogeneous structures can be increasingly better described by homogeneous smooth layers when lowering the typical length dimensions. In parallel, the obtained effective amount of overlayer material (or effective overlayer thickness), is systematically lower than the real one. Limitations of the 'magic-angle concept' are derived. Possible improvement of the method is discussed by consideration of elastic scattering.

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Section: Homogeneous Overlayer -Magic Anglesupporting

confidence: 93%

“…[17,18] Looking for an optimum measurement angle for the characterization of larger powder particles (diameter ALs) we modeled large spheres (diameter about 50 nm) covered homogeneously with an overlayer material (Fig. 2(b)).…”

Section: Homogeneous Overlayer -Magic Anglementioning

confidence: 99%

Modeling of complex surface structures for ARXPS

Oswald

2008

Surface & Interface Analysis

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“…The differences of peak profile and the changes in the FWHM of the Si2p could be attributed to the distribution of chemically shifted Si2p lines arising from surface roughening as reported previously in literature [23,24]. In fact, it has been shown that surface roughening does have a major contribution to the overall spatial intensity of the photoelectron [25][26][27]. When this comparison was made with the silicon (100) surfaces, the Si-O-C levels were even more profound, especially for the p-type silicon (100) (Figure 2c) and n-type silicon (100) (Figure 2d).…”

Section: Resultssupporting

confidence: 76%

Influences of Doping and Crystal Orientation on Surface Roughening upon Alcohol Grafting onto Silicon Hydride

Tung

Khung

2017

Applied Sciences

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An alcohol bearing alkyne was thermally grafted to both p-type and n-type silicon (111) and (100) substrate of comparable doping levels and surface flatness. The surface topography as well as the surface chemistry was examined via atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and water contact angle measurements. P-type silicon (111) was observed to experience roughening on the surface upon functionalization while n-type silicon (111) surfaces remained relatively unchanged. When the alcohol was grafted onto silicon (100) surface, the roughening effect was found to be even more profound for the p-type while the effects were marginal for the n-type surfaces. Both roughening effects were attributed to the differential weakening of the Si-Si backbond induced by majority carriers in p-and n-type silicon while (111) was observed to be able to resist the roughening effect better and this was explained by the notion of its denser adatom surface packing as well as the presence of surface defects.

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“…As photoelectron analyser, a standard system with a hemispherical energy filter and an electron detector based on discrete channeltrons was operated at 20 eV pass energy. The angle between x-ray source and entrance cone of the analyser is 54° (magic angle) [18] with the electron lens placed perpendicular to the probed surface. A sputtered Au foil served as reference sample in order to calibrate the energy analyser by making use of the Au4f7/2 transition at 84.0 eV [19].…”

Section: Methodsmentioning

confidence: 99%

Cu(In,Ga)Se2 surface treatment with Na and NaF: A combined photoelectron spectroscopy and surface photovoltage study in ultra-high vacuum

Parvan

Mızrak

Majumdar

et al. 2018

Applied Surface Science

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Either metallic Na or NaF were deposited onto Cu(In,Ga)Se 2 surfaces and studied by photoelectron spectroscopy and surface photovoltage spectroscopy without breaking the ultra-high vacuum. The deposition of elemental Na at room temperature led to the formation of an intermediate Cu and Ga rich layer at the CIGSe surface, whereas for NaF the composition of the CIGSe surface remained unchanged. A metal like surface induced by an inverted near surface region with a reduced number of defect states was formed after the deposition of Na. Under the chosen experimental conditions, the near surface layer was independent on the amount of Na and stable in time. In contrast, the usage of NaF weakened the inversion and led to an increased band bending compared to the untreated CIGSe sample. The SPV signals decreased with proceeding time after the deposition of NaF.

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Surface roughness effects in quantitative XPS: magic angle for determining overlayer thickness

Cited by 100 publications

References 15 publications

Modeling of complex surface structures for ARXPS

Modeling of complex surface structures for ARXPS

Influences of Doping and Crystal Orientation on Surface Roughening upon Alcohol Grafting onto Silicon Hydride

Cu(In,Ga)Se2 surface treatment with Na and NaF: A combined photoelectron spectroscopy and surface photovoltage study in ultra-high vacuum

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