Surface roughness and structural aspects of anodic and cathodic plasma deposited a-Si:H at low temperature

Dalakos, George T.; Plawsky, Joel L.; Persans, P. D.

doi:10.1016/j.jnoncrysol.2004.08.187

Cited by 6 publications

(4 citation statements)

References 19 publications

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“…The large b was also observed by other research groups for both amorphous and micro-crystalline Si film [2,4]. The growth kinetic processes including shadow effect, Schwoebel effect, surface H coverage, re-emission, etc.…”

Section: Discussionsupporting

confidence: 74%

“…According to the KPZ model [4], thin film growth surface under the non-equilibrium condition often shows the scaling behaviors: d $ d b , where d is the root-mean-square (rms) surface roughness, d film thickness. The growth exponent, b has the universal values of 1/2 for zero diffusion, 1/ 3 for finite diffusion and 0 for step flow growth mode.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The comparisons of growth mechanisms for Si thin films with different deposition rates in CVD process by the description of the roughness evolution

Liu

Sun

et al. 2008

Journal of Non-Crystalline Solids

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Section: Discussionsupporting

confidence: 74%

Section: Introductionmentioning

confidence: 99%

The comparisons of growth mechanisms for Si thin films with different deposition rates in CVD process by the description of the roughness evolution

Liu

Sun

et al. 2008

Journal of Non-Crystalline Solids

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“…The reported results showed that β is usually varying between 0~0.5 for amorphous Si [5,6]. The KPZ model [7] is usually applied to describe the roughening mechanism of the amorphous surface. However, subsequent studies showed that the relationship of z = α/β required by a self-affine surface was seldom satisfied for amorphous Si deposited by sputtering or CVD [8,9].…”

Section: The Hight-hight Correlation Function H(r) Is Defined To Be Hmentioning

confidence: 99%

Kinetic roughening and mound surface growth in microcrystalline silicon thin films

Liu

Zhu

et al. 2010

Phys. Status Solidi (c)

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The roughening evolution of the hydrogenated microcrys‐talline silicon (μc‐Si:H) film by plasma enhanced chemical vapor deposition (PECVD) and hot wire chemical vapor deposition (HWCVD) were investigated using atomic force microscopy (AFM). It is found that the kinetic roughening of the μc‐Si:H film surface can not be described by the traditional dynamic scaling approach. The appearance of characteristic peaks in the power spectral density (PSD) curves, calculated from the AFM images, indicates the mounded growth characteristic of μc‐Si:H film. The correlation between the mounded surface growth of μc‐Si:H thin films and the shadowing effect has been studied. It is found that high hydrogen dilution ratio in the early growth stage retards the formation of the mound structure (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…This phenomenon is due to the fact that high temperature leads to extensive film precursor diffusions on the surface of the film. Such movable precursor species have enough energy to fill nanovoids and to suppress the formation of porous microstructure [21] . As a result, film precursors have more chance to diffuse into the surface valleys before being incorporated into the film [12] .…”

Section: Substrate Temperaturementioning

confidence: 99%

Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition

Feng

Zhang

et al. 2009

Plasma Sci. Technol.

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Influence of the parameters of plasma enhanced chemical vapor deposition (PECVD) on the surface morphology of hydrogenated amorphous silicon (α-Si:H) film was investigated. The root-mean-square (RMS) roughness of the film was measured by atomic force microscope (AFM) and the relevant results were analyzed using the surface smoothing mechanism of film deposition. It is shown that an α-Si:H film with smooth surface morphology can be obtained by increasing the PH3/N2 gas flow rate for 10% in a high frequency (HF) mode. For high power, however, the surface morphology of the film will deteriorate when the SiH4 gas flow rate increases. Furthermore, optimized parameters of PECVD for growing the film with smooth surface were obtained to be SiH4: 25 sccm (standard cubic centimeters per minute), Ar: 275 sccm, 10%PH3/N2: 2 sccm, HF power: 15 W, pressure: 0.9 Torr and temperature: 350 o C. In addition, for in thick film deposition on silicon substrate, a N2O and NH3 preprocessing method is proposed to suppress the formation of gas bubbles.

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Surface roughness and structural aspects of anodic and cathodic plasma deposited a-Si:H at low temperature

Cited by 6 publications

References 19 publications

The comparisons of growth mechanisms for Si thin films with different deposition rates in CVD process by the description of the roughness evolution

The comparisons of growth mechanisms for Si thin films with different deposition rates in CVD process by the description of the roughness evolution

Kinetic roughening and mound surface growth in microcrystalline silicon thin films

Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition

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