Surface Residue Island Nucleation in Anhydrous HF/Alcohol Vapor Processing of Si Surfaces

Abstract

Anhydrous HF/methanol vapor-phase chemistries were employed to etch SiO 2 /Si surfaces at low pressure (5-50 Torr) and ambient temperature. The oxides on Si were formed from the following: (i) RCA chemical cleaning and (ii) UV-ozone treatment. Atomic force microscopy (AFM) and lateral force microscopy (LFM) were used to analyze the HF vapor-cleaned Si surfaces. AFM/LFM displayed residue islands distributed randomly upon the Si surface as a result of vapor-phase cleaning. As a result of etching RCA chemical oxides, the average lateral dimension of the residue islands is 40 nm and the average height of the islands is 6 nm. As a result of etching UV-ozone oxides, the average lateral dimension of the residue islands is 30 nm, and the average height of the islands is 3.5 nm. A decrease in residue island density is observed after the removal of a UV-ozone oxide compared to RCA chemical oxide removal. Secondary ion mass spectroscopy was used to characterize chemical impurities (O, C, F, and N) in the SiO 2 films and and the Si surface after HF vapor-phase cleaning. The constituents of the residue islands have been attributed to nitrogen impurities and silicon atoms imbedded in the passivating oxides. Results indicate that condensation of methanol vapor onto the bare Si surface, after oxide removal, is necessary for residue island formation. We suggest a model in which residue island nucleation occurs from nonvolatile N-Si complexes that form hydrogen bonds with methanol molecules and diffuse into the adsorbed alcohol layer. The molecular impurities then interact and form residue islands. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.216.129.208 Downloaded on 2015-03-22 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.216.129.208 Downloaded on 2015-03-22 to IP

Extended Design Space of Silicon-on-Nothing MEMS

“…The oxide passivation layers of the GSON process successfully protect the hole sidewalls during the isotropic etch steps. [19], which was not completely removed before imaging but properly removed before annealing. c) 52 • tilted SEM image after annealing.…”

“…b) Top view SEM image before annealing. The diamond-shape marks are residue from oxide strip by vapor HF[19], which was not completely removed before imaging but properly removed before annealing. c) 52 • tilted SEM image after annealing.…”

Comparative Surface Study on Silicon Dioxide Film Covered with Alcohols

“…It has been reported that these alcohols remain on the wafer surface and adsorb to adsorption sites. [23][24][25][26] Therefore, it is important to determine whether they uniformly adsorb on the surface or not, because device performance may be affected by their adsorption state. It is also important to understand the relationship between their adsorption state as well as the coverage amount and water contact angle (WCA), because WCA is commonly used as the measurement manner for carbon contamination, hydrophilicity, or hydrophobicity on the surface.…”