1998
DOI: 10.1080/01418619808239962
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Surface relaxation of strained semiconductor heterostructures revealed by finite-element calculations and transmission electron microscopy

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Cited by 14 publications
(1 citation statement)
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“…One can consider the altering of the diameter to be caused by the relaxation of strain induced by the lattice mismatch of the two materials. The lattice relaxes by expanding like it is well known for strained thin foils [16] prepared for TEM investigations. The lattice parameter of cubic ZnTe (a ZnTe = 0.610 nm) and of cubic CdTe (a CdTe = 0.648 nm) cause a mismatch of about 6 %.…”
Section: Resultsmentioning
confidence: 97%
“…One can consider the altering of the diameter to be caused by the relaxation of strain induced by the lattice mismatch of the two materials. The lattice relaxes by expanding like it is well known for strained thin foils [16] prepared for TEM investigations. The lattice parameter of cubic ZnTe (a ZnTe = 0.610 nm) and of cubic CdTe (a CdTe = 0.648 nm) cause a mismatch of about 6 %.…”
Section: Resultsmentioning
confidence: 97%