Surface‐Related Optical Properties of GaN‐Based Nanowires

Lefèbvre, Pierre

doi:10.1002/9781118984321.ch3

Cited by 2 publications

(1 citation statement)

References 39 publications

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“…However, this model does not provide any explanation for the fact that the (IDB * , X) band often exhibits a doublet structure. As shown first by Calleja et al [6], the band at 3.45 eV actually consists of two lines centered at about 3.449 and 3.455 eV [47,58]. This finding is confirmed by the PL spectra of samples B6, B7, and D at 40 K as shown in Fig.…”

Section: Optical Properties Of the (Idb * X) Bandsupporting

confidence: 78%

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

et al. 2016

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We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be particularly prominent for samples synthesized at comparatively low temperatures. At the same time, these samples exhibit a peculiar morphology, namely, isolated long nanowires are interspersed within a dense matrix of short ones. Cathodoluminescence intensity maps reveal the 3.45-eV band to originate primarily from the long nanowires. Transmission electron microscopy shows that these long nanowires are either Ga polar and are joined by an inversion domain boundary with their short N-polar neighbors, or exhibit a Ga-polar core surrounded by a N-polar shell with a tubular inversion domain boundary at the core/shell interface. For samples grown at high temperatures, which exhibit a uniform nanowire morphology, the 3.45-eV band is also found to originate from particular nanowires in the ensemble and thus presumably from inversion domain boundaries stemming from the coexistence of Nand Ga-polar nanowires. For several of the investigated samples, the 3.45-eV band splits into a doublet. We demonstrate that the higher-energy component of this doublet arises from the recombination of two-dimensional excitons free to move in the plane of the inversion domain boundary. In contrast, the lower-energy component of the doublet originates from excitons localized in the plane of the inversion domain boundary. We propose that this in-plane localization is due to shallow donors in the vicinity of the inversion domain boundaries.

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Section: Optical Properties Of the (Idb * X) Bandsupporting

confidence: 78%

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

et al. 2016

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The Evolution of General Administrative Law and the Emergence of Postmodern Administrative Law

Ladeur

2011

SSRN Journal

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Abstract:The discussion on the emergence of global administrative law is centered around the question: "Is it law?" and problems of accountability. This is a narrow perspective which ignores the autonomy of the administrative "internal law" generated by administrative agencies themselves. This is shown for the evolution of domestic administrative law in the 19 th century and its transformations in the 20 th century. Domestic administrative law is only to a much lesser extent a product of courts or legislators than hitherto taken for granted. This is why it should not come as a surprise that the instruments and forms of global administrative law are generated by transnational administrative networks of agencies. The evolution of both domestic and transnational administrative law will allow for new heterarchical forms of accountability and legitimation once the focus on a hierarchical concept of delegation is given up. The paper tries to outline a perspective on the transformation of administrative law based on domestic administrative law but at the same time intends to open a perspective on a new look at the emergent global administrative law.Keywords: accountability, global administrative law, autonomy, administrative "internal law", Domestic administrative law, transnational administrative networks of agencies, new heterarchical forms of accountability, legitimation, delegation, transformation JEL Classification: K 39 Karl-Heinz Ladeur The Evolution of General Administrative Law and the Emergence of Postmodern Administrative LawKarl-Heinz Ladeur * I. PRELIMINARY REMARKSThe discussion on "international administrative law" has been established -following the logic of its object -as an international topic for quite some time. However, this evolution does not exclude the differentiation of, so to speak, regional and methodologically approaches within the global network of legal research: in the US, one can observe a focus on "global administrative law" at the law faculty of NYU -and this shift of the accent to "global" instead of "international administrative law" is not without consequences. The focus is more on case studies and methodological questions. 1 This approach corresponds with the ideas of an Italian group of researchers, which has been set up at Viterbo, 2 and with other individual contributors to the international discussion. In as far as one can already talk about an established field of research in Germany, one can observe a different focus on a rather traditional systematic differentiation of certain "matters" which are undergoing a process of internationalisation. 3 In the following, an approach will be developed which tries to build a bridge between global and domestic administrative law. It will be shown that there is a close link between the evolution of administrative law in postmodernity and the emergence of global administrative law, and that the basic institutions of administrative law are products of the autonomous rationality of administration. This sheds new light on the questions of bo...

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Surface‐Related Optical Properties of GaN‐Based Nanowires

Cited by 2 publications

References 39 publications

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

The Evolution of General Administrative Law and the Emergence of Postmodern Administrative Law

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