Surface reconstructions of InGaAs alloys

In situ monitoring of the growth procedure of InAs layer by spectral reflectance

“…Since the growth was carried out under As-rich condition, these bondings might be excess As-dimers along the [1 1 0] direction on InGaAs surface. However, we note that some of InGaAs surfaces, such as (4 Â 3) and (2 Â 4) reconstructions, can have the As-dimers in the [1 1 0] direction [14] and may be able to show different SR behavior from that we observe in the current work. Since the surface reconstruction of InGaAs layer in current study is not fully identified yet, further studies of InGaAs surface by SR are required.…”

Growth of an InGaAs/GaAsSb tunnel junction for an InP-based low band gap tandem solar cell

“…3b. In the literature, different ð2 Â 4Þ-reconstructions are reported (a2; b2; g; z), depending on the In to Ga ratio of InGaAs [6,10]. InAs(1 0 0) and GaAs(1 0 0) surfaces display the ð2 Â 4Þ surface reconstruction for both MBE-and MOCVDgrown samples [8,11,12].…”

InGaAs/GaAsSb-interface studies in a tunnel junction of a low band gap tandem solar cell

“…Increasing the sample temperature to 370°C already reduced both the V/III ratio and the In/Ga ratio, while the surface reconstruction did not change according to the LEED images. In the literature, two different atomic models were discussed for a (4 × 3)-reconstructed InGaAs surface [18,19]. The model of Bone et al of the (4 × 3)-reconstructed surface [18], containing four As-dimers per unit cell, also resulted in a significant higher V/III and In/Ga ratio compared to the model of Mirecki Millunchick et al [19], which contains only one As-dimer, three In-dimers and one InAs-dimer.…”