2001
DOI: 10.1016/s0921-5107(00)00560-2
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Surface reconstruction of silicon and polysilicon by Nd:YAG laser etching: SEM, Raman and PL studies

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Cited by 16 publications
(6 citation statements)
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“…253,255,256 In particular, Kumar et al 251 have shown that, depending upon the laser power density, different etching stages can form cracks, pores, and pillar-like structures on the Si wafer. To get the porous structures, the laser power density should neither be very low nor very high.…”
Section: Structure Characterizationmentioning
confidence: 99%
“…253,255,256 In particular, Kumar et al 251 have shown that, depending upon the laser power density, different etching stages can form cracks, pores, and pillar-like structures on the Si wafer. To get the porous structures, the laser power density should neither be very low nor very high.…”
Section: Structure Characterizationmentioning
confidence: 99%
“…The relative intensities vary with the laser power density. Low etching power densities (<5 W cm −2 ) create only a surface disorder with no nanocrystal formation [30,31]. Only a small number of electron-hole pairs are generated and no PL emission is observed.…”
Section: Resultsmentioning
confidence: 99%
“…Analysis of the PSi layer morphology has shown that the structure of the porous layer during laser-induced etching can be controlled by the excitation laser power density, etching time, concentration of etchant, and wavelength of laser source used (Wellner et al 2000;Rasheed et al 2001;Mavi et al 2006). In particular, Kumar et al (2008) have shown that depending on the laser power density, different etching stages naming cracks, pores, and pillar-like structures can be formed on the Si wafer.…”
Section: Structure Characterizationmentioning
confidence: 99%